All MOSFET. FXN18N20C Datasheet

 

FXN18N20C Datasheet and Replacement


   Type Designator: FXN18N20C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 180 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 16.5 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 39 nC
   tr ⓘ - Rise Time: 54 nS
   Cossⓘ - Output Capacitance: 192 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: TO220
 

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FXN18N20C Datasheet (PDF)

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FXN18N20C

FuXin Semiconductor Co., Ltd. FXN18N20C Series Rev.A General Description Features The FXN18N20C uses advanced Silicon s MOSFET Technology, which VDS = 200V provides high performance in on-state resistance, fast switching ID = 18A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in indust

 8.1. Size:746K  cn fx-semi
 fxn18n50f.pdf pdf_icon

FXN18N20C

FuXin Semiconductor Co., Ltd. FXN18N50F Series Rev.AGeneral Description Features The FXN18N50F uses advanced Silicon s MOSFET Technology, which V = 500V DSprovides high performance in on-state resistance, fast switching ID = 18A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in ind

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History: CEM3083

Keywords - FXN18N20C MOSFET datasheet

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