FXN18N20C Specs and Replacement

Type Designator: FXN18N20C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 180 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 16.5 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 54 nS

Cossⓘ - Output Capacitance: 192 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm

Package: TO220

FXN18N20C substitution

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FXN18N20C datasheet

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FXN18N20C

FuXin Semiconductor Co., Ltd. FXN18N20C Series Rev.A General Description Features The FXN18N20C uses advanced Silicon s MOSFET Technology, which VDS = 200V provides high performance in on-state resistance, fast switching ID = 18A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in indust... See More ⇒

 8.1. Size:746K  cn fx-semi
 fxn18n50f.pdf pdf_icon

FXN18N20C

FuXin Semiconductor Co., Ltd. FXN18N50F Series Rev.A General Description Features The FXN18N50F uses advanced Silicon s MOSFET Technology, which V = 500V DS provides high performance in on-state resistance, fast switching ID = 18A @V = 10V GS performance, and excellent quality. Very low on-resistance These devices can also be utilized in ind... See More ⇒

Detailed specifications: FXN0206C, FXN0303D, FXN0304C, FXN9N45F, FXN9N50F, FXN9N90F, FXN9N90P, FXN15S50F, STP65NF06, FXN18N50F, FXN20N50F, FXN0704F, FXN0706C, FXN0707C, FXN0707CN, FXN4613F, FXN4615F

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.