FXN18N20C Datasheet and Replacement
Type Designator: FXN18N20C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 16.5 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 39 nC
trⓘ - Rise Time: 54 nS
Cossⓘ - Output Capacitance: 192 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
Package: TO220
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FXN18N20C Datasheet (PDF)
fxn18n20c.pdf
FuXin Semiconductor Co., Ltd. FXN18N20C Series Rev.A General Description Features The FXN18N20C uses advanced Silicon s MOSFET Technology, which VDS = 200V provides high performance in on-state resistance, fast switching ID = 18A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in indust
fxn18n50f.pdf
FuXin Semiconductor Co., Ltd. FXN18N50F Series Rev.AGeneral Description Features The FXN18N50F uses advanced Silicon s MOSFET Technology, which V = 500V DSprovides high performance in on-state resistance, fast switching ID = 18A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in ind
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