FXN0706C PDF and Equivalents Search

 

FXN0706C PDF Specs and Replacement


   Type Designator: FXN0706C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 90 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 63.5 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 272 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO220
 

 FXN0706C substitution

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FXN0706C PDF Specs

 ..1. Size:317K  cn fx-semi
fxn0706c.pdf pdf_icon

FXN0706C

FuXin Semiconductor Co., Ltd. FXN0706C Series Rev.A General Description Features The FXN0706C uses advanced Silicon s MOSFET Technology, which VDS = 65V provides high performance in on-state resistance, fast switching ID = 100A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri... See More ⇒

 8.1. Size:296K  cn fx-semi
fxn0703d.pdf pdf_icon

FXN0706C

FuXin Semiconductor Co., Ltd. FXN0703D Series Rev.A General Description Features The FXN0703D uses advanced Silicon s MOSFET Technology, which VDS = 30V provides high performance in on-state resistance, fast switching ID = 70A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria... See More ⇒

 8.2. Size:364K  cn fx-semi
fxn0704c.pdf pdf_icon

FXN0706C

FuXin Semiconductor Co., Ltd. FXN0704C Series Rev.A General Description Features The FXN0704C uses advanced Silicon s MOSFET Technology, which VDS = 40V provides high performance in on-state resistance, fast switching ID = 60A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria... See More ⇒

 8.3. Size:938K  cn fx-semi
fxn0707cn.pdf pdf_icon

FXN0706C

FuXin Semiconductor Co., Ltd. FXN0707CN Series Rev.A General Description Features The FXN0707CN uses advanced Silicon s MOSFET Technology, which VDS = 75V provides high performance in on-state resistance, fast switching ID = 100A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial appli... See More ⇒

Detailed specifications: FXN9N50F , FXN9N90F , FXN9N90P , FXN15S50F , FXN18N20C , FXN18N50F , FXN20N50F , FXN0704F , IRFZ46N , FXN0707C , FXN0707CN , FXN4613F , FXN4615F , FXN4620F , FXN4625F , FXN7N65F , FXN8N60F .

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