FXN8N65D Datasheet and Replacement
Type Designator: FXN8N65D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 170 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 6.4 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Qg ⓘ - Total Gate Charge: 30 nC
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 108 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
Package: TO252
FXN8N65D substitution
FXN8N65D Datasheet (PDF)
fxn8n65d.pdf
FuXin Semiconductor Co., Ltd. FXN8N65D Series Rev.A General Description Features The FXN8N65D uses advanced Silicon s MOSFET Technology, which VDS = 650V provides high performance in on-state resistance, fast switching ID = 8A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria
fxn8n65f.pdf
1 FuXin Semiconductor Co., Ltd. Electrical Characteristics (TJ =25oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V 650 - - V Gate Threshold Voltage VGS(th) 2.0 3.0 4.0 VDS = VGS, ID = 250A Drain Cut-Off Current IDSS VDS = 650V, VGS = 0V - - 1 A Ga
fxn8n60f.pdf
FuXin Semiconductor Co., Ltd.FXN8N60F Series Rev.AGeneral Description FeaturesThe FXN8N60F uses advanced Silicon s MOSFET Technology, whichV = 600VDSprovides high performance in on-state resistance, fast switchingID = 8A @V = 10VGSperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial appl
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