FXN07N10NS MOSFET PDF: N-Ch, 100V, 7A. Datasheet. Full specification with pinout and replacement list

FXN07N10NS Specs and Replacement

   Type Designator: FXN07N10NS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 3.5 nS
   Cossⓘ - Output Capacitance: 25 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: SOP8

FXN07N10NS substitution

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FXN07N10NS datasheet

..1. Size:326K cn fx-semi
fxn07n10ns.pdf pdf_icon

FuXin Semiconductor Co., Ltd. Rev.A FXN07N10NS Features General Description The FXN07N10NS uses advanced Silicon s MOSFET Technology, VDS = 100V ID = 7A @VGS = 10V which provides high performance in on-state resistance, fast Very low on-resistance switching performance, and excellent quality. RDS(ON) ... See More ⇒

9.1. Size:296K cn fx-semi
fxn0703d.pdf pdf_icon

FuXin Semiconductor Co., Ltd. FXN0703D Series Rev.A General Description Features The FXN0703D uses advanced Silicon s MOSFET Technology, which VDS = 30V provides high performance in on-state resistance, fast switching ID = 70A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria... See More ⇒

9.2. Size:317K cn fx-semi
fxn0706c.pdf pdf_icon

FuXin Semiconductor Co., Ltd. FXN0706C Series Rev.A General Description Features The FXN0706C uses advanced Silicon s MOSFET Technology, which VDS = 65V provides high performance in on-state resistance, fast switching ID = 100A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri... See More ⇒

9.3. Size:364K cn fx-semi
fxn0704c.pdf pdf_icon

FuXin Semiconductor Co., Ltd. FXN0704C Series Rev.A General Description Features The FXN0704C uses advanced Silicon s MOSFET Technology, which VDS = 40V provides high performance in on-state resistance, fast switching ID = 60A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria... See More ⇒