Справочник MOSFET. FXN07N10NS

 

FXN07N10NS Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FXN07N10NS
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 1.7 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 7 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 3.5 ns
   Cossⓘ - Выходная емкость: 25 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.055 Ohm
   Тип корпуса: SOP8
 

 Аналог (замена) для FXN07N10NS

   - подбор ⓘ MOSFET транзистора по параметрам

 

FXN07N10NS Datasheet (PDF)

 ..1. Size:326K  cn fx-semi
fxn07n10ns.pdfpdf_icon

FXN07N10NS

FuXin Semiconductor Co., Ltd. Rev.A FXN07N10NS Features General Description The FXN07N10NS uses advanced Silicons MOSFET Technology, VDS = 100V ID = 7A @VGS = 10V which provides high performance in on-state resistance, fast Very low on-resistance switching performance, and excellent quality. RDS(ON)

 9.1. Size:296K  cn fx-semi
fxn0703d.pdfpdf_icon

FXN07N10NS

FuXin Semiconductor Co., Ltd. FXN0703D Series Rev.A General Description Features The FXN0703D uses advanced Silicon s MOSFET Technology, which VDS = 30V provides high performance in on-state resistance, fast switching ID = 70A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria

 9.2. Size:317K  cn fx-semi
fxn0706c.pdfpdf_icon

FXN07N10NS

FuXin Semiconductor Co., Ltd. FXN0706C Series Rev.A General Description Features The FXN0706C uses advanced Silicon s MOSFET Technology, which VDS = 65V provides high performance in on-state resistance, fast switching ID = 100A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri

 9.3. Size:364K  cn fx-semi
fxn0704c.pdfpdf_icon

FXN07N10NS

FuXin Semiconductor Co., Ltd. FXN0704C Series Rev.A General Description Features The FXN0704C uses advanced Silicon s MOSFET Technology, which VDS = 40V provides high performance in on-state resistance, fast switching ID = 60A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria

Другие MOSFET... FXN10N06D , FXN10N50F , FXN10N65F , FXN10N80F , FXN5N65D , FXN5N65F , FXN5N65FM , FXN65S55T , IRF840 , FXN0808C , FXN08S65D , FXN09150C , FXN4607F , FXN4609F , FXN4611F , FXN4628F , FXN11N45F .

History: FQB5N40TM | IRF620A | NCV8401 | IRFZ44VPBF

 

 
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