FXN07N10NS. Аналоги и основные параметры

Наименование производителя: FXN07N10NS

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 1.7 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 7 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 3.5 ns

Cossⓘ - Выходная емкость: 25 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.055 Ohm

Тип корпуса: SOP8

Аналог (замена) для FXN07N10NS

- подборⓘ MOSFET транзистора по параметрам

 

FXN07N10NS даташит

 ..1. Size:326K  cn fx-semi
 fxn07n10ns.pdf pdf_icon

FXN07N10NS

FuXin Semiconductor Co., Ltd. Rev.A FXN07N10NS Features General Description The FXN07N10NS uses advanced Silicon s MOSFET Technology, VDS = 100V ID = 7A @VGS = 10V which provides high performance in on-state resistance, fast Very low on-resistance switching performance, and excellent quality. RDS(ON)

 9.1. Size:296K  cn fx-semi
 fxn0703d.pdf pdf_icon

FXN07N10NS

FuXin Semiconductor Co., Ltd. FXN0703D Series Rev.A General Description Features The FXN0703D uses advanced Silicon s MOSFET Technology, which VDS = 30V provides high performance in on-state resistance, fast switching ID = 70A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria

 9.2. Size:317K  cn fx-semi
 fxn0706c.pdf pdf_icon

FXN07N10NS

FuXin Semiconductor Co., Ltd. FXN0706C Series Rev.A General Description Features The FXN0706C uses advanced Silicon s MOSFET Technology, which VDS = 65V provides high performance in on-state resistance, fast switching ID = 100A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industri

 9.3. Size:364K  cn fx-semi
 fxn0704c.pdf pdf_icon

FXN07N10NS

FuXin Semiconductor Co., Ltd. FXN0704C Series Rev.A General Description Features The FXN0704C uses advanced Silicon s MOSFET Technology, which VDS = 40V provides high performance in on-state resistance, fast switching ID = 60A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... FXN10N06D, FXN10N50F, FXN10N65F, FXN10N80F, FXN5N65D, FXN5N65F, FXN5N65FM, FXN65S55T, IRF840, FXN0808C, FXN08S65D, FXN09150C, FXN4607F, FXN4609F, FXN4611F, FXN4628F, FXN11N45F