All MOSFET. FXN0808C Datasheet

 

FXN0808C Datasheet and Replacement


   Type Designator: FXN0808C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 190 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 81 nC
   tr ⓘ - Rise Time: 41 nS
   Cossⓘ - Output Capacitance: 318 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO220
 

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FXN0808C Datasheet (PDF)

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FXN0808C

FuXin Semiconductor Co., Ltd. FXN0808C Series Rev.AGeneral Description Features The FXN0808C uses advanced Silicon s MOSFET Technology, which VDS = 80V provides high performance in on-state resistance, fast switching ID = 100A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria

 9.1. Size:712K  cn fx-semi
 fxn08s65d.pdf pdf_icon

FXN0808C

FuXin Semiconductor Co., Ltd. FXN08S65D Series Rev.A General Description Features The FXN08S65D uses advanced Cool MOSFET Technology, which VDS = 650V provides high performance in on-state resistance, fast switching ID = 8A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial applic

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