All MOSFET. FXN0808C Datasheet

 

FXN0808C Datasheet and Replacement


   Type Designator: FXN0808C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 190 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 81 nC
   trⓘ - Rise Time: 41 nS
   Cossⓘ - Output Capacitance: 318 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO220
      - MOSFET Cross-Reference Search

 

FXN0808C Datasheet (PDF)

 ..1. Size:987K  cn fx-semi
 fxn0808c.pdf pdf_icon

FXN0808C

FuXin Semiconductor Co., Ltd. FXN0808C Series Rev.AGeneral Description Features The FXN0808C uses advanced Silicon s MOSFET Technology, which VDS = 80V provides high performance in on-state resistance, fast switching ID = 100A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria

 9.1. Size:712K  cn fx-semi
 fxn08s65d.pdf pdf_icon

FXN0808C

FuXin Semiconductor Co., Ltd. FXN08S65D Series Rev.A General Description Features The FXN08S65D uses advanced Cool MOSFET Technology, which VDS = 650V provides high performance in on-state resistance, fast switching ID = 8A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial applic

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

Keywords - FXN0808C MOSFET datasheet

 FXN0808C cross reference
 FXN0808C equivalent finder
 FXN0808C lookup
 FXN0808C substitution
 FXN0808C replacement

 

 
Back to Top

 


 
.