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FXN08S65D Specs and Replacement


   Type Designator: FXN08S65D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 6.4 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm
   Package: TO252
 

 FXN08S65D substitution

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FXN08S65D Specs

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FXN08S65D

FuXin Semiconductor Co., Ltd. FXN08S65D Series Rev.A General Description Features The FXN08S65D uses advanced Cool MOSFET Technology, which VDS = 650V provides high performance in on-state resistance, fast switching ID = 8A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial applic... See More ⇒

 9.1. Size:987K  cn fx-semi
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FXN08S65D

FuXin Semiconductor Co., Ltd. FXN0808C Series Rev.A General Description Features The FXN0808C uses advanced Silicon s MOSFET Technology, which VDS = 80V provides high performance in on-state resistance, fast switching ID = 100A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria... See More ⇒

Detailed specifications: FXN10N65F , FXN10N80F , FXN5N65D , FXN5N65F , FXN5N65FM , FXN65S55T , FXN07N10NS , FXN0808C , IRF540N , FXN09150C , FXN4607F , FXN4609F , FXN4611F , FXN4628F , FXN11N45F , FXN12N60FS , FXN12N65F .

History: H5N2507P | FXN09150C

Keywords - FXN08S65D MOSFET specs

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