FXN08S65D Datasheet. Specs and Replacement

Type Designator: FXN08S65D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 62.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6.4 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm

Package: TO252

  📄📄 Copy 

FXN08S65D substitution

- MOSFET ⓘ Cross-Reference Search

 

FXN08S65D datasheet

 ..1. Size:712K  cn fx-semi
 fxn08s65d.pdf pdf_icon

FXN08S65D

FuXin Semiconductor Co., Ltd. FXN08S65D Series Rev.A General Description Features The FXN08S65D uses advanced Cool MOSFET Technology, which VDS = 650V provides high performance in on-state resistance, fast switching ID = 8A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industrial applic... See More ⇒

 9.1. Size:987K  cn fx-semi
 fxn0808c.pdf pdf_icon

FXN08S65D

FuXin Semiconductor Co., Ltd. FXN0808C Series Rev.A General Description Features The FXN0808C uses advanced Silicon s MOSFET Technology, which VDS = 80V provides high performance in on-state resistance, fast switching ID = 100A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in industria... See More ⇒

Detailed specifications: FXN10N65F, FXN10N80F, FXN5N65D, FXN5N65F, FXN5N65FM, FXN65S55T, FXN07N10NS, FXN0808C, IRF1404, FXN09150C, FXN4607F, FXN4609F, FXN4611F, FXN4628F, FXN11N45F, FXN12N60FS, FXN12N65F

Keywords - FXN08S65D MOSFET specs

 FXN08S65D cross reference

 FXN08S65D equivalent finder

 FXN08S65D pdf lookup

 FXN08S65D substitution

 FXN08S65D replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs