FXN32N55T Specs and Replacement
Type Designator: FXN32N55T
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 320 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 550 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 32 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 120 nS
Cossⓘ - Output Capacitance: 520 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
Package: TO247
FXN32N55T substitution
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FXN32N55T datasheet
fxn32n55t.pdf
FuXin Semiconductor Co., Ltd. Rev.A FXN32N55T Features General Description VDS = 550V The FXN32N55T uses advanced Silicon s MOSFET Technology, ID = 32A @VGS = 10V which provides high performance in on-state resistance, fast Very low on-resistance switching performance, and excellent quality. RDS(ON) ... See More ⇒
Detailed specifications: FXN4607F , FXN4609F , FXN4611F , FXN4628F , FXN11N45F , FXN12N60FS , FXN12N65F , FXN12S65F , IRFP260N , FXN40N03C , FXN40N03H , FXN40N20C , FXN13N45F , FXN13N50C , FXN13N50K , FXN15N06D , FXN30S55C .
Keywords - FXN32N55T MOSFET specs
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FXN32N55T replacement
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