FXN32N55T Datasheet and Replacement
Type Designator: FXN32N55T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 320 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 550 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 32 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 110 nC
trⓘ - Rise Time: 120 nS
Cossⓘ - Output Capacitance: 520 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
Package: TO247
- MOSFET Cross-Reference Search
FXN32N55T Datasheet (PDF)
..1. Size:280K cn fx-semi
fxn32n55t.pdf
fxn32n55t.pdf
FuXin Semiconductor Co., Ltd. Rev.A FXN32N55T Features General Description VDS = 550V The FXN32N55T uses advanced Silicons MOSFET Technology, ID = 32A @VGS = 10V which provides high performance in on-state resistance, fast Very low on-resistance switching performance, and excellent quality. RDS(ON)
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Keywords - FXN32N55T MOSFET datasheet
FXN32N55T
cross reference
FXN32N55T
equivalent finder
FXN32N55T
lookup
FXN32N55T
substitution
FXN32N55T
replacement
