All MOSFET. FXN32N55T Datasheet

 

FXN32N55T Datasheet and Replacement


   Type Designator: FXN32N55T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 320 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 550 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 32 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 120 nS
   Cossⓘ - Output Capacitance: 520 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
   Package: TO247
 

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FXN32N55T Datasheet (PDF)

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FXN32N55T

FuXin Semiconductor Co., Ltd. Rev.A FXN32N55T Features General Description VDS = 550V The FXN32N55T uses advanced Silicons MOSFET Technology, ID = 32A @VGS = 10V which provides high performance in on-state resistance, fast Very low on-resistance switching performance, and excellent quality. RDS(ON)

Datasheet: FXN4607F , FXN4609F , FXN4611F , FXN4628F , FXN11N45F , FXN12N60FS , FXN12N65F , FXN12S65F , 10N60 , FXN40N03C , FXN40N03H , FXN40N20C , FXN13N45F , FXN13N50C , FXN13N50K , FXN15N06D , FXN30S55C .

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