FXN13N50C Datasheet and Replacement
Type Designator: FXN13N50C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 198 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 11.8 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 49 nS
Cossⓘ - Output Capacitance: 192 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.48 Ohm
Package: TO220
FXN13N50C substitution
FXN13N50C Datasheet (PDF)
fxn13n50c.pdf

FuXin Semiconductor Co., Ltd. FXN13N50C Series Rev.A General Description Features The FXN13N50C uses advanced Silicon s MOSFET Technology, which VDS = 500V provides high performance in on-state resistance, fast switching ID = 13A @VGS = 10V performance, and excellent quality. Very low on-resistance These devices can also be utilized in indust
fxn13n50k.pdf

FuXin Semiconductor Co., Ltd.FXN13N50K Series Rev.AGeneral Description FeaturesThe FXN13N50K uses advanced Silicon s MOSFET Technology, whichV = 500VDSprovides high performance in on-state resistance, fast switchingID = 15A @V = 10VGSperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial a
fxn13n45f.pdf

FuXin Semiconductor Co., Ltd. FXN13N45F Series Rev.A General Description Features The FXN13N45F uses advanced Silicon s MOSFET Technology, which V = 450V DSprovides high performance in on-state resistance, fast switching ID = 13A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in in
Datasheet: FXN12N60FS , FXN12N65F , FXN12S65F , FXN32N55T , FXN40N03C , FXN40N03H , FXN40N20C , FXN13N45F , IRFB4110 , FXN13N50K , FXN15N06D , FXN30S55C , FXN30S55F , FXN30S60F , FXN30S60T , FXN20S60F , FXN23S65F .
History: DMC3028LSDX | IRLR9343TR | UT3401G-AE3-R | SGSP461 | DMN3009SK3 | SE2102M | WMM14N65C4
Keywords - FXN13N50C MOSFET datasheet
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History: DMC3028LSDX | IRLR9343TR | UT3401G-AE3-R | SGSP461 | DMN3009SK3 | SE2102M | WMM14N65C4



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