All MOSFET. FXN30S60F Datasheet

 

FXN30S60F Datasheet and Replacement


   Type Designator: FXN30S60F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 49 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 24 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 49 nC
   trⓘ - Rise Time: 78 nS
   Cossⓘ - Output Capacitance: 208 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: TO220F
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FXN30S60F Datasheet (PDF)

 ..1. Size:563K  cn fx-semi
 fxn30s60f.pdf pdf_icon

FXN30S60F FXN30S60F

FuXin Semiconductor Co., Ltd. FXN30S60F Series ReV.AGeneral Description Features The FXN30S60F uses adVanced Silicon s MOSFET Technology, which V = 600V DSproVides high performance in on-state resistance, fast switching ID =30A @V = 10V GSperformance, and excellent quality. Very low on-resistance These deVices can also be utilized in indu

 6.1. Size:901K  cn fx-semi
 fxn30s60t.pdf pdf_icon

FXN30S60F FXN30S60F

FuXin Semiconductor Co., Ltd. FXN30S60T Series ReV.AGeneral Description Features The FXN30S60T uses adVanced Silicon s MOSFET Technology, which V = 600V DSproVides high performance in on-state resistance, fast switching ID =30A @V = 10V GSperformance, and excellent quality. Very low on-resistance These deVices can also be utilized in indu

 8.1. Size:787K  cn fx-semi
 fxn30s55c.pdf pdf_icon

FXN30S60F FXN30S60F

FuXin Semiconductor Co., Ltd. FXN30S55C Series Rev.AGeneral Description Features The FXN30S55C uses advanced Silicon s MOSFET Technology, which V = 550V DSprovides high performance in on-state resistance, fast switching ID =30A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in indu

 8.2. Size:864K  cn fx-semi
 fxn30s55f.pdf pdf_icon

FXN30S60F FXN30S60F

FuXin Semiconductor Co., Ltd. FXN3 0S55F Series Rev.AGeneral Description Features The FXN30S55F uses advanced Silicon s MOSFET Technology, which V = 550V DSprovides high performance in on-state resistance, fast switching ID =30A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in ind

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Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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