All MOSFET. FXN28N50P Datasheet

 

FXN28N50P Datasheet and Replacement


   Type Designator: FXN28N50P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 108 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 23 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 80 nC
   tr ⓘ - Rise Time: 38 nS
   Cossⓘ - Output Capacitance: 1420 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: TO3P
 

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FXN28N50P Datasheet (PDF)

 ..1. Size:869K  cn fx-semi
 fxn28n50p.pdf pdf_icon

FXN28N50P

FuXin Semiconductor Co., Ltd. FXN28N50P Series Rev.AGeneral Description Features The FXN28N50P uses advanced Silicon s MOSFET Technology, which V = 500V DSprovides high performance in on-state resistance, fast switching ID =28A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in indu

 6.1. Size:916K  cn fx-semi
 fxn28n50f.pdf pdf_icon

FXN28N50P

FuXin Semiconductor Co., Ltd. FXN28N50F Series Rev.AGeneral Description Features The FXN28N50F uses advanced Silicon s MOSFET Technology, which V = 500V DSprovides high performance in on-state resistance, fast switching ID =28A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in indu

 6.2. Size:1061K  cn fx-semi
 fxn28n50t.pdf pdf_icon

FXN28N50P

FuXin Semiconductor Co., Ltd.FXN28N50T Series Rev.AGeneral Description Features The FXN28N50T uses advanced Silicon s MOSFET Technology, which V = 500V DSprovides high performance in on-state resistance, fast switching ID =28A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in indust

 9.1. Size:686K  cn fx-semi
 fxn28s50f.pdf pdf_icon

FXN28N50P

FuXin Semiconductor Co., Ltd. FXN28S50F Series Rev.AGeneral Description Features The FXN28S50F uses advanced Silicon s MOSFET Technology, which V = 500V DSprovides high performance in on-state resistance, fast switching ID =28A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in indu

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