All MOSFET. FXN30N50F Datasheet

 

FXN30N50F Datasheet and Replacement


   Type Designator: FXN30N50F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 320 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 26 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 38 nS
   Cossⓘ - Output Capacitance: 1420 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO220F
 

 FXN30N50F substitution

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FXN30N50F Datasheet (PDF)

 ..1. Size:494K  cn fx-semi
 fxn30n50f.pdf pdf_icon

FXN30N50F

FuXin Semiconductor Co., Ltd.FXN30N50F Series Rev.AGeneral Description FeaturesThe FXN30N50F uses advanced Silicon s MOSFET Technology, whichV = 500VDSprovides high performance in on-state resistance, fast switchingID =30A @V = 10VGSperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial ap

 6.1. Size:624K  cn fx-semi
 fxn30n50t.pdf pdf_icon

FXN30N50F

FuXin Semiconductor Co., Ltd.FXN30N50T Series Rev.AGeneral Description FeaturesThe FXN30N50T uses advanced Silicon s MOSFET Technology, whichV = 500VDSprovides high performance in on-state resistance, fast switchingID =30A @V = 10VGSperformance, and excellent quality.Very low on-resistanceThese devices can also be utilized in industrial ap

 9.1. Size:901K  cn fx-semi
 fxn30s60t.pdf pdf_icon

FXN30N50F

FuXin Semiconductor Co., Ltd. FXN30S60T Series ReV.AGeneral Description Features The FXN30S60T uses adVanced Silicon s MOSFET Technology, which V = 600V DSproVides high performance in on-state resistance, fast switching ID =30A @V = 10V GSperformance, and excellent quality. Very low on-resistance These deVices can also be utilized in indu

 9.2. Size:787K  cn fx-semi
 fxn30s55c.pdf pdf_icon

FXN30N50F

FuXin Semiconductor Co., Ltd. FXN30S55C Series Rev.AGeneral Description Features The FXN30S55C uses advanced Silicon s MOSFET Technology, which V = 550V DSprovides high performance in on-state resistance, fast switching ID =30A @V = 10V GSperformance, and excellent quality. Very low on-resistance These devices can also be utilized in indu

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Datasheet: FXN25N50F , FXN25S55GF , FXN28N50F , FXN28N50P , FXN28N50T , FXN28S50F , FXN15N50F , FXN2N60D , 12N60 , FXN30N50T , FXN9N40C , FXN4N60D , FXN4N65D , FXN7N65D , CRJQ99N65G2 , LSD07N80A-VB , FXN0204C .

History: FXN30N50T | FXN4N60D

Keywords - FXN30N50F MOSFET datasheet

 FXN30N50F cross reference
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 FXN30N50F replacement

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