13N90 MOSFET Datasheet: N-Ch, 900V, 13A. Full specification with pinout and replacement list

13N90 Specs and Replacement

Type Designator: 13N90

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 190 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 310 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm

Package: TO3PN

13N90 substitution

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13N90 datasheet

..1. Size:1102K cn wxdh
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13N90 13A 900V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the self-aligned V DSS = 900V planar technology which reduce the conduction loss, improve switching I = 13A D performance and enhance the avalanche energy. Which accords with the RoHS standard. R DS(on) TYP) = 610m 2 Features Fast switching ESD impr... See More ⇒

0.1. Size:179K ixys
ixfh10n90 ixfm10n90 ixfh12n90 ixfm12n90 ixfh13n90 ixfm13n90.pdf pdf_icon

VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFM 10 N90 900 V 10 A 1.1 Power MOSFETs IXFH/IXFM 12 N90 900 V 12 A 0.9 IXFH/IXFT 13 N90 900 V 13 A 0.8 N-Channel Enhancement Mode 250 ns High dv/dt, Low trr, HDMOSTM Family trr TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 1... See More ⇒

0.2. Size:963K jilin sino
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N R N-CHANNEL MOSFET JCS13N90A MAIN CHARACTERISTICS Package ID 13.0 A VDSS 900 V Rdson Vgs=10V 0.75 -MAX Qg-Typ 66.64 nC APPLICATIONS High efficiency switch mode . power supplies Electronic lamp ballasts based on half bridge LED power s... See More ⇒

0.3. Size:155K solitron
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