DH0159 Datasheet and Replacement
Type Designator: DH0159
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 230 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 59 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 120 nS
Cossⓘ - Output Capacitance: 200 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
Package: TO220
DH0159 substitution
DH0159 Datasheet (PDF)
dh0159 dh0159f dh0159b dh0159d dh0159i dh0159e.pdf

DH0159/DH0159F/DH0159BDH0159D/DH0159I/DH0159E59A 100V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 100VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 13.0mDS(on) (TYP)standard.13 SI = 59AD2 Features Low on resistance
Datasheet: 13N90 , 14N65 , 18N50D , D2N60 , D4N70 , D4N80 , D50N06 , D5N50 , 10N65 , DH0159B , DH0159D , DH0159E , DH0159F , DH0159I , DH019N04 , DH019N04B , DH019N04D .
History: 14N65 | GC11N65T | FMV08N50E | H4N60U
Keywords - DH0159 MOSFET datasheet
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History: 14N65 | GC11N65T | FMV08N50E | H4N60U



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