All MOSFET. DH0159E Datasheet

 

DH0159E Datasheet and Replacement


   Type Designator: DH0159E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 230 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 59 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 96 nC
   tr ⓘ - Rise Time: 120 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
   Package: TO263
 
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DH0159E Datasheet (PDF)

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DH0159E

DH0159/DH0159F/DH0159BDH0159D/DH0159I/DH0159E59A 100V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 100VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 13.0mDS(on) (TYP)standard.13 SI = 59AD2 Features Low on resistance

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