DH0159E Datasheet. Specs and Replacement

Type Designator: DH0159E  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 230 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 59 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 120 nS

Cossⓘ - Output Capacitance: 200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm

Package: TO263

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DH0159E datasheet

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DH0159E

DH0159/DH0159F/DH0159B DH0159D/DH0159I/DH0159E 59A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 100V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 13.0m DS(on) (TYP) standard. 1 3 S I = 59A D 2 Features Low on resistance ... See More ⇒

Detailed specifications: D2N60, D4N70, D4N80, D50N06, D5N50, DH0159, DH0159B, DH0159D, 2SK3568, DH0159F, DH0159I, DH019N04, DH019N04B, DH019N04D, DH019N04E, 20N65D, 23N50D

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