DH0159E PDF Specs and Replacement
Type Designator: DH0159E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 230 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 59 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 120 nS
Cossⓘ - Output Capacitance: 200 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
Package: TO263
DH0159E substitution
DH0159E PDF Specs
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DH0159/DH0159F/DH0159B DH0159D/DH0159I/DH0159E 59A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 100V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 13.0m DS(on) (TYP) standard. 1 3 S I = 59A D 2 Features Low on resistance ... See More ⇒
Detailed specifications: D2N60 , D4N70 , D4N80 , D50N06 , D5N50 , DH0159 , DH0159B , DH0159D , 2SK3568 , DH0159F , DH0159I , DH019N04 , DH019N04B , DH019N04D , DH019N04E , 20N65D , 23N50D .
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