JMTE070N07A Specs and Replacement
Type Designator: JMTE070N07A
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 232 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 68 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 123 nS
Cossⓘ - Output Capacitance: 361 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
Package: TO263
JMTE070N07A substitution
- MOSFET ⓘ Cross-Reference Search
JMTE070N07A datasheet
jmte070n07a.pdf
JMTE070N07A Description JMT N-channel Enhancement Mode Power MOSFET Features Application 68V, 120A Load Switch R ... See More ⇒
jmte018n03a.pdf
30V, 190A, 1.9m N-channel Power Trench MOSFET JMTE018N03A Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS TESTED VDSS 30 V 100% Vds TESTED VGS(th)_Typ 1.5 V Halogen-free; RoHS-compliant ID(@VGS=10V) 190 A Pb-free plating RDS(ON)_Typ(@VGS=10V 1.9 mW Applications Load Switch PWM Application Power M... See More ⇒
jmte035n06d.pdf
JMTE035N06D Description JMT N-channel Enhancement Mode Power MOSFET Features Application 60V, 180A Load Switch R ... See More ⇒
jmte060n06a.pdf
JMTE060N06A Description JMT N-channel Enhancement Mode Power MOSFET Features Application 60V, 120A Load Switch R ... See More ⇒
Detailed specifications: 60N10D, 60N10E, 60N10F, 60N10I, AOB413, B110N04, HYG035N10NS2P, HYG035N10NS2B, IRF1405, DH012N03D, DH012N03E, DH012N03F, DH012N03I, DH012N03P, DH012N03U, DH019N04F, DH019N04I
Keywords - JMTE070N07A MOSFET specs
JMTE070N07A cross reference
JMTE070N07A equivalent finder
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JMTE070N07A replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: WPMD2012 | AP4543GEM-HF | WMM120P06TS | WMN26N60C4 | 9N90L-T3P | AP4511GH-A | SPB80N06S2-05
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