JMTE070N07A - Даташиты. Аналоги. Основные параметры

JMTE070N07A Description JMT N-channel Enhancement Mode Power MOSFET Features Application 68V, 120A Load Switch R

30V, 190A, 1.9m N-channel Power Trench MOSFETJMTE018N03AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TESTEDVDSS 30 V 100% Vds TESTEDVGS(th)_Typ 1.5 V Halogen-free; RoHS-compliantID(@VGS=10V) 190 A Pb-free platingRDS(ON)_Typ(@VGS=10V 1.9 mWApplications Load Switch PWM Application Power M

JMTE035N06DDescriptionJMT N-channel Enhancement Mode Power MOSFETFeatures Application 60V, 180A Load SwitchR

JMTE060N06ADescriptionJMT N-channel Enhancement Mode Power MOSFETFeatures Application 60V, 120A Load SwitchR

40V, 190A, 1.5m N-channel Power Trench MOSFETJMTE025N04DProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 40 V 100% Vds TestedVGS(th)_Typ 2.7 V Halogen-free; RoHS-compliantID(@VGS=10V) 190 ARDS(ON)_Typ@VGS=10V 1.5 mWApplications Load Switch PWM Application Power ManagementDG ST

40V, 150A, 3.2m N-channel Power Trench MOSFETJMTE035N04AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS 40 V 100% Vds TestedVGS(th)_Typ 2.8 V Halogen-free; RoHS-compliantID(@VGS=10V) 150 A Pb-free platingRDS(ON)_Typ(@VGS=10V 3.2 mWApplications Load Switch PWM Application Power M

70V, 80A, 6.2m N-channel Power Trench MOSFETJMTE068N07AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 70 V 100% Vds TestedVGS(th)_Typ 2.9 V Halogen-free; RoHS-compliantID(@VGS=10V) 80 ARDS(ON)_Typ(@VGS=10V 5.8 mWRDS(ON)_Typ(@VGS=8.0V 6.2 mWApplications Load Switch PWM Application P