All MOSFET. FQPF7N80C Datasheet

 

FQPF7N80C Datasheet and Replacement


   Type Designator: FQPF7N80C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 6.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.9 Ohm
   Package: TO220F
 

 FQPF7N80C substitution

   - MOSFET ⓘ Cross-Reference Search

 

FQPF7N80C Datasheet (PDF)

 ..1. Size:848K  fairchild semi
fqp7n80c fqpf7n80c.pdf pdf_icon

FQPF7N80C

TMQFETFQP7N80C/FQPF7N80C800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 6.6A, 800V, RDS(on) = 1.9 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 27 nC)planar stripe, DMOS technology. Low Crss ( typical 10 pF)This advanced technology has been especially tailored to

 ..2. Size:849K  onsemi
fqp7n80c fqpf7n80c.pdf pdf_icon

FQPF7N80C

TMQFETFQP7N80C/FQPF7N80C800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 6.6A, 800V, RDS(on) = 1.9 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 27 nC)planar stripe, DMOS technology. Low Crss ( typical 10 pF)This advanced technology has been especially tailored to

 ..3. Size:218K  inchange semiconductor
fqpf7n80c.pdf pdf_icon

FQPF7N80C

isc N-Channel MOSFET Transistor FQPF7N80CFEATURES Drain-source on-resistance:RDS(on) 1.9@10VFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh efficiency switch mode power supplies.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol

 6.1. Size:787K  fairchild semi
fqpf7n80.pdf pdf_icon

FQPF7N80C

April 2000TMQFETQFETQFETQFET 800V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.8A, 800V, RDS(on) = 1.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 40 nC)planar stripe, DMOS technology. Low Crss ( typical 19 pF)This advanced technology has been e

Datasheet: FQPF6N80T , FDH50N50 , FQPF6N90C , FQPF70N10 , FDH45N50F , FQPF7N60 , FDN5632NF085 , FQPF7N65C , 2N60 , FDD16AN08F085 , FQPF7P20 , FQPF85N06 , FQPF8N60C , FDD24AN06LF085 , FQPF8N60CF , FDMS7680 , FQPF8N80C .

Keywords - FQPF7N80C MOSFET datasheet

 FQPF7N80C cross reference
 FQPF7N80C equivalent finder
 FQPF7N80C lookup
 FQPF7N80C substitution
 FQPF7N80C replacement

 

 
Back to Top

 


 
.