Справочник MOSFET. FQPF7N80C

 

FQPF7N80C Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FQPF7N80C
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 56 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 6.6 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.9 Ohm
   Тип корпуса: TO220F
 

 Аналог (замена) для FQPF7N80C

   - подбор ⓘ MOSFET транзистора по параметрам

 

FQPF7N80C Datasheet (PDF)

 ..1. Size:848K  fairchild semi
 fqp7n80c fqpf7n80c.pdf pdf_icon

FQPF7N80C

TMQFETFQP7N80C/FQPF7N80C800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 6.6A, 800V, RDS(on) = 1.9 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 27 nC)planar stripe, DMOS technology. Low Crss ( typical 10 pF)This advanced technology has been especially tailored to

 ..2. Size:849K  onsemi
 fqp7n80c fqpf7n80c.pdf pdf_icon

FQPF7N80C

TMQFETFQP7N80C/FQPF7N80C800V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 6.6A, 800V, RDS(on) = 1.9 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 27 nC)planar stripe, DMOS technology. Low Crss ( typical 10 pF)This advanced technology has been especially tailored to

 ..3. Size:218K  inchange semiconductor
 fqpf7n80c.pdf pdf_icon

FQPF7N80C

isc N-Channel MOSFET Transistor FQPF7N80CFEATURES Drain-source on-resistance:RDS(on) 1.9@10VFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh efficiency switch mode power supplies.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol

 6.1. Size:787K  fairchild semi
 fqpf7n80.pdf pdf_icon

FQPF7N80C

April 2000TMQFETQFETQFETQFET 800V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 3.8A, 800V, RDS(on) = 1.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 40 nC)planar stripe, DMOS technology. Low Crss ( typical 19 pF)This advanced technology has been e

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Другие MOSFET... FQPF6N80T , FDH50N50 , FQPF6N90C , FQPF70N10 , FDH45N50F , FQPF7N60 , FDN5632NF085 , FQPF7N65C , 2N60 , FDD16AN08F085 , FQPF7P20 , FQPF85N06 , FQPF8N60C , FDD24AN06LF085 , FQPF8N60CF , FDMS7680 , FQPF8N80C .

History: EMH1303

 

 
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