FQPF7N80C datasheet, аналоги, основные параметры
Наименование производителя: FQPF7N80C 📄📄
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 56 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 800 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 6.6 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1.9 Ohm
Тип корпуса: TO220F
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Аналог (замена) для FQPF7N80C
- подборⓘ MOSFET транзистора по параметрам
FQPF7N80C даташит
..1. Size:848K fairchild semi
fqp7n80c fqpf7n80c.pdf 
TM QFET FQP7N80C/FQPF7N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 6.6A, 800V, RDS(on) = 1.9 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 27 nC) planar stripe, DMOS technology. Low Crss ( typical 10 pF) This advanced technology has been especially tailored to
..2. Size:849K onsemi
fqp7n80c fqpf7n80c.pdf 
TM QFET FQP7N80C/FQPF7N80C 800V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 6.6A, 800V, RDS(on) = 1.9 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 27 nC) planar stripe, DMOS technology. Low Crss ( typical 10 pF) This advanced technology has been especially tailored to
..3. Size:218K inchange semiconductor
fqpf7n80c.pdf 
isc N-Channel MOSFET Transistor FQPF7N80C FEATURES Drain-source on-resistance RDS(on) 1.9 @10V Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High efficiency switch mode power supplies. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol
6.1. Size:787K fairchild semi
fqpf7n80.pdf 
April 2000 TM QFET QFET QFET QFET 800V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 3.8A, 800V, RDS(on) = 1.5 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 40 nC) planar stripe, DMOS technology. Low Crss ( typical 19 pF) This advanced technology has been e
8.1. Size:683K fairchild semi
fqpf7n20.pdf 
April 2000 TM QFET QFET QFET QFET 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 4.8A, 200V, RDS(on) = 0.69 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 8.0 nC) planar stripe, DMOS technology. Low Crss ( typical 9.0 pF) This advanced technology has bee
8.2. Size:886K fairchild semi
fqp7n65c fqpf7n65c.pdf 
QFET FQP7N65C/FQPF7N65C 650V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7A, 650V, RDS(on) = 1.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especially tailored to
8.3. Size:550K fairchild semi
fqpf7n10.pdf 
December 2000 TM QFET QFET QFET QFET FQPF7N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.5A, 100V, RDS(on) = 0.35 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 5.8 nC) planar stripe, DMOS technology. Low Crss ( typical 10 pF) This advanced technology is esp
8.4. Size:885K fairchild semi
fqp7n65c fqpf7n65cydtu fqpf7n65c f105.pdf 
QFET FQP7N65C/FQPF7N65C 650V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 7A, 650V, RDS(on) = 1.4 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 28 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology has been especially tailored to
8.5. Size:554K fairchild semi
fqpf7n10l.pdf 
December 2000 TM QFET QFET QFET QFET FQPF7N10L 100V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.5A, 100V, RDS(on) = 0.35 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 4.6 nC) planar stripe, DMOS technology. Low Crss ( typical 12 pF) This advanced technology
8.6. Size:604K fairchild semi
fqpf7n60.pdf 
April 2000 TM QFET QFET QFET QFET FQPF7N60 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.3A, 600V, RDS(on) = 1.0 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 29 nC) planar stripe, DMOS technology. Low Crss ( typical 16 pF) This advanced technology has been es
8.7. Size:782K fairchild semi
fqpf7n40.pdf 
April 2000 TM QFET QFET QFET QFET 400V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 4.6A, 400V, RDS(on) = 0.8 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 16.5 nC) planar stripe, DMOS technology. Low Crss ( typical 13 pF) This advanced technology has bee
8.8. Size:548K fairchild semi
fqpf7n20l.pdf 
December 2000 TM QFET QFET QFET QFET FQPF7N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.0A, 200V, RDS(on) = 0.75 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 6.8 nC) planar stripe, DMOS technology. Low Crss ( typical 8.5 pF) This advanced technolog
Другие IGBT... FQPF6N80T, FDH50N50, FQPF6N90C, FQPF70N10, FDH45N50F, FQPF7N60, FDN5632NF085, FQPF7N65C, 20N50, FDD16AN08F085, FQPF7P20, FQPF85N06, FQPF8N60C, FDD24AN06LF085, FQPF8N60CF, FDMS7680, FQPF8N80C
