DH020N03D Specs and Replacement
Type Designator: DH020N03D
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 278 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 200 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 120 nS
Cossⓘ - Output Capacitance: 787 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm
Package: TO252
DH020N03D substitution
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DH020N03D datasheet
dh020n03 dh020n03f dh020n03i dh020n03e dh020n03b dh020n03d.pdf
DH020N03/DH020N03F/DH020N03I/ DH020N03E/DH020N03B/DH020N03D 200A 30V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 30V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 2.0m DS(on) (TYP) standard. 1 3 S I = 200A D 2 Features Low on res... See More ⇒
Detailed specifications: DH012N03F, DH012N03I, DH012N03P, DH012N03U, DH019N04F, DH019N04I, DH020N03, DH020N03B, RU7088R, DH020N03E, B25N10, B2N65, B4N60, B4N65, B4N80, B50N06, B5N50
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: SRC60R017FB | MT06N008A
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