B50N06 Datasheet and Replacement

50N06/F50N06/I50N06/E50N06/B50N06/D50N0660A 68V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 68VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 10.5mDS(on) (TYP)standard.13 SI = 60AD2 Features Low on resistance Low ga

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB50N06V/DDesigner's Data SheetMTB50N06VTMOS VMotorola Preferred DevicePower Field Effect TransistorD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 42 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresistanceRDS(on) = 0.028 OHMarea product about

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB50N06EL/DAdvance InformationMTB50N06ELTMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorsTMOS POWER FETD2PAK for Surface MountLOGIC LEVELLogic Level TMOS (L2TMOS )50 AMPERES60 VOLTSNChannel EnhancementMode Silicon GateRDS(on) = 0.028 OHMThese TMOS Power FETs are designed fo

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB50N06VL/DDesigner's Data SheetMTB50N06VLTMOS VMotorola Preferred DevicePower Field Effect TransistorD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 42 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresistanceRDS(on) = 0.032 OHMarea product abou

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB50N06V/DDesigner's Data SheetMTB50N06VTMOS VMotorola Preferred DevicePower Field Effect TransistorD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 42 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresistanceRDS(on) = 0.028 OHMarea product about

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB50N06EL/DAdvance InformationMTB50N06ELTMOS E-FET.Motorola Preferred DevicePower Field Effect TransistorsTMOS POWER FETD2PAK for Surface MountLOGIC LEVELLogic Level TMOS (L2TMOS )50 AMPERES60 VOLTSNChannel EnhancementMode Silicon GateRDS(on) = 0.028 OHMThese TMOS Power FETs are designed fo

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MTB50N06VL/DDesigner's Data SheetMTB50N06VLTMOS VMotorola Preferred DevicePower Field Effect TransistorD2PAK for Surface MountTMOS POWER FETNChannel EnhancementMode Silicon Gate 42 AMPERES60 VOLTSTMOS V is a new technology designed to achieve an onresistanceRDS(on) = 0.032 OHMarea product abou

Philips Semiconductors Product specification TrenchMOS transistor PHB50N06T Standard level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode SYMBOL PARAMETER MAX. UNITstandard level field-effect powertransistor in a plastic envelope VDS Drain-source voltage 55 Vsuitable for surface mounting. Using ID Drain current (DC) 50 Atrench technology the devic

Philips Semiconductors Product specification TrenchMOS transistor PHB50N06LT Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope suitable for surface VDS Drain-source voltage 55 Vmounting. Using trench technology ID Drain current (DC) 50 Athe device fea

October 2008QFETFQB50N06 / FQI50N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 50A, 60V, RDS(on) = 0.022 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC)planar stripe, DMOS technology. Low Crss ( typical 65 pF)This advanced technology has been especially

October 2008QFETFQB50N06 / FQI50N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 50A, 60V, RDS(on) = 0.022 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 31 nC)planar stripe, DMOS technology. Low Crss ( typical 65 pF)This advanced technology has been especially

October 2008QFETFQB50N06L / FQI50N06L60V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 52.4A, 60V, RDS(on) = 0.021 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 24.5 nC)planar stripe, DMOS technology. Low Crss ( typical 90 pF)This advanced technology has bee

October 2008QFETFQB50N06L / FQI50N06L60V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 52.4A, 60V, RDS(on) = 0.021 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 24.5 nC)planar stripe, DMOS technology. Low Crss ( typical 90 pF)This advanced technology has bee

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

CEP50N06/CEB50N06N-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 50A ,RDS(ON) = 17m (typ) @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESSTO-263(DD-PAK)TO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise no

BRB50N06(BRCS50N06B) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-263 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features R C DS(on) rssLow RDS(on),low gate charge, low Crss, fast switching. / Applications DC/DC

DH50N06FZC/DHF50N06FZC/DHI50N06FZC/DHE50N06FZC/DHB50N06FZC/DHD50N06FZC50A 60V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel Enhanced VDMOSFETs Used2 DVDSS = 60Vadvanced trench technology design, provided excellentRDSON and low gate charge. Which accords with theRDS = 18m(on) (TYP)GRoHS standard.1ID = 50A3 S2 Features Fast Switching

VBZFB50N06www.VBsemi.comN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) 60 TrenchFET Power MOSFETRDS(on) () at VGS = 10 V 0.010 Material categorization:RDS(on) () at VGS = 4.5 V 0.012ID (A) 50Configuration SingleTO-251DGSN-Channel MOSFETG D STop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless other

FQB50N06www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 60600.013 at VGS = 4.5 V 50DD2PAK(TO-263)GGDSSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit UnitVGSGate-Source