All MOSFET. B7N70 Datasheet

 

B7N70 Datasheet and Replacement


   Type Designator: B7N70
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 88 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.75 Ohm
   Package: TO251
 

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B7N70 Datasheet (PDF)

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B7N70

B7N707A 700V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhanced vdmosfets, is obtained by the self-alignedVDSS = 700Vplanar technology which reduce the conduction loss, improve switchingI = 7.0ADperformance and enhance the avalanche energy. Which accords with theRoHS standard.RDS(on)TYP)=1.352 Features Fast switching ESD impro

Datasheet: B4N65 , B4N80 , B50N06 , B5N50 , B5N65 , B630 , B640 , B740 , IRF540 , B80N06 , DATD063N06N , DATP057N06N , DH009N02 , DH009N02B , DH009N02D , DH009N02E , DH009N02F .

History: RFM4N40 | PSMN005-75P

Keywords - B7N70 MOSFET datasheet

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