B7N70 Specs and Replacement
Type Designator: B7N70
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 88 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.75 Ohm
Package: TO251
B7N70 substitution
- MOSFET ⓘ Cross-Reference Search
B7N70 datasheet
b7n70.pdf
B7N70 7A 700V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the self-aligned V DSS = 700V planar technology which reduce the conduction loss, improve switching I = 7.0A D performance and enhance the avalanche energy. Which accords with the RoHS standard. R DS(on) TYP) =1.35 2 Features Fast switching ESD impro... See More ⇒
Detailed specifications: B4N65, B4N80, B50N06, B5N50, B5N65, B630, B640, B740, IRF540N, B80N06, DATD063N06N, DATP057N06N, DH009N02, DH009N02B, DH009N02D, DH009N02E, DH009N02F
Keywords - B7N70 MOSFET specs
B7N70 cross reference
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B7N70 replacement
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