B7N70 Datasheet and Replacement
Type Designator: B7N70
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 88 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.75 Ohm
Package: TO251
B7N70 substitution
B7N70 Datasheet (PDF)
b7n70.pdf

B7N707A 700V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhanced vdmosfets, is obtained by the self-alignedVDSS = 700Vplanar technology which reduce the conduction loss, improve switchingI = 7.0ADperformance and enhance the avalanche energy. Which accords with theRoHS standard.RDS(on)TYP)=1.352 Features Fast switching ESD impro
Datasheet: B4N65 , B4N80 , B50N06 , B5N50 , B5N65 , B630 , B640 , B740 , IRF540 , B80N06 , DATD063N06N , DATP057N06N , DH009N02 , DH009N02B , DH009N02D , DH009N02E , DH009N02F .
History: RFM4N40 | PSMN005-75P
Keywords - B7N70 MOSFET datasheet
B7N70 cross reference
B7N70 equivalent finder
B7N70 lookup
B7N70 substitution
B7N70 replacement
History: RFM4N40 | PSMN005-75P



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