All MOSFET. DATP057N06N Datasheet

 

DATP057N06N Datasheet and Replacement


   Type Designator: DATP057N06N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 71 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 48 nS
   Cossⓘ - Output Capacitance: 263 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0057 Ohm
   Package: DFN5X6-8
 

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DATP057N06N Datasheet (PDF)

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DATP057N06N

DATP057N06N70A 60V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 60VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR = 5.3mDS(on) (TYP)Gstandard.1I =70AD3 S2 Features AEC-Q101 qualified MSL1 up to 260C peak reflow 175

Datasheet: B5N50 , B5N65 , B630 , B640 , B740 , B7N70 , B80N06 , DATD063N06N , IRFP460 , DH009N02 , DH009N02B , DH009N02D , DH009N02E , DH009N02F , DH009N02I , DH009N02P , DH012N03 .

History: IGOT60R070D1

Keywords - DATP057N06N MOSFET datasheet

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