All MOSFET. DH009N02P Datasheet

 

DH009N02P Datasheet and Replacement


   Type Designator: DH009N02P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 113 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 220 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 123 nS
   Cossⓘ - Output Capacitance: 1386 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0012 Ohm
   Package: PPAK5X6-8
 

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DH009N02P Datasheet (PDF)

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DH009N02P

DH009N02P220A 20V N-channel Enhancement Mode Power MOSFET1 DescriptionThe N-channel enhancement mode power mosfets used2 DV = 20VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 1mDS(on) (TYP)standard.13 SI = 220AD2 Features Low on resistance Low gate charge Fast switching L

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 dh009n02 dh009n02f dh009n02i dh009n02e dh009n02b dh009n02d.pdf pdf_icon

DH009N02P

DH009N02/DH009N02F/DH009N02IDH009N02E/DH009N02B/DH009N02D310A 20V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 20VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 1.35mDS(on) (TYP)standard.13 SI = 310AD2 Features Low on res

Datasheet: DATD063N06N , DATP057N06N , DH009N02 , DH009N02B , DH009N02D , DH009N02E , DH009N02F , DH009N02I , 10N60 , DH012N03 , DH012N03B , D12N06 , D18N20 , D25N10 , D5N65-XAD , D630 , D640 .

History: YJQ40P03A

Keywords - DH009N02P MOSFET datasheet

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