D640 Datasheet and Replacement
Type Designator: D640
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 33 nS
Cossⓘ - Output Capacitance: 183 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: TO252
D640 substitution
D640 Datasheet (PDF)
640 f640 i640 e640 b640 d640.pdf

640/F640/I640/E640/B640/D64018A 200V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhanced vdmosfets, is obtained by the2 DV = 200Vself-aligned planar technology which reduce the DSSconduction loss, improve switching performance andR = 0.12DS(on) (TYP)Genhance the avalanche energy. Which accords with the1RoHS standard.I = 18A3 S D2 Featur
ipd640n06lg ipd640n06l g.pdf

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brd640.pdf

BRD640 Rev.D May.-2016 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features ,,Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficiency swi
Datasheet: DH009N02P , DH012N03 , DH012N03B , D12N06 , D18N20 , D25N10 , D5N65-XAD , D630 , IRFB4115 , D740 , D7N60 , D7N70 , D80N06 , D8N50 , D9N65 , 18P10 , 18P10B .
History: MDHT4N20YURH | AOTS21319C | FDD5810F085 | FDD13AN06A0F085 | FQPF6N80C
Keywords - D640 MOSFET datasheet
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History: MDHT4N20YURH | AOTS21319C | FDD5810F085 | FDD13AN06A0F085 | FQPF6N80C



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