D640 Datasheet PDF and Equivalents Search

 ..1. Size:1407K  cn wxdh
 640 f640 i640 e640 b640 d640.pdf

640/F640/I640/E640/B640/D640 18A 200V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the 2 D V = 200V self-aligned planar technology which reduce the DSS conduction loss, improve switching performance and R = 0.12 DS(on) (TYP) G enhance the avalanche energy. Which accords with the 1 RoHS standard. I = 18A 3 S D 2 Featur... See More ⇒

 0.1. Size:993K  infineon
 ipd640n06lg ipd640n06l g.pdf

% # ! % (>.;?6?@ %>E Features D P ?A 61BC BF9C389>7 3?>E5AC5AB 1>4 BH>3 A53C96931C9?> 4 mW D n) m x P ( 381>>581>35=5>C ... See More ⇒

 0.2. Size:91K  no
 2sd640.pdf

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 0.3. Size:1175K  blue-rocket-elect
 brd640.pdf

BRD640 Rev.D May.-2016 DATA SHEET / Descriptions TO-252 N MOS N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficiency swi... See More ⇒

 0.4. Size:539K  silan
 svd640t svd640d svd640f.pdf

SVD640T/D/F 18A 200V N SVD640T/D/F N MOS S-RinTM VDMOS AC-DC ... See More ⇒

 0.5. Size:442K  silan
 svd640t svd640d svd640dtr svd640s svd640str.pdf

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 0.6. Size:769K  cn vbsemi
 ipd640n06lg.pdf

IPD640N06LG www.VBsemi.tw N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.025 at VGS = 10 V 35 RoHS* 60 0.030 at VGS = 4.5 V 30 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise n... See More ⇒

 0.7. Size:199K  inchange semiconductor
 2sd640.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD640 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V (Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.5V (Max.)@ I = 5A CE(sat) C Excellent Safe Operating Area Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High voltage switching applicatio... See More ⇒

 0.8. Size:241K  inchange semiconductor
 ipd640n06l.pdf

isc N-Channel MOSFET Transistor IPD640N06L,IIPD640N06L FEATURES Static drain-source on-resistance RDS(on) 64m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 60 V DSS V Ga... See More ⇒