D740 PDF and Equivalents Search

 ..1. Size:1411K  cn wxdh
 740 f740 i740 e740 b740 d740.pdf

740/F740/I740/ E740/B740/D740 10A 400V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the 2 D V = 400V DSS self-aligned planar technology which reduce the conduction loss, improve switching performance and enhance the R = 0.44 DS(on)(TYP) G avalanche energy. Which accords with the RoHS standard. 1 I = 10A 3 S D 2 Featu... See More ⇒

 0.1. Size:416K  cet
 ceu740a ced740a.pdf

CED740A/CEU740A N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 400V, 9A, RDS(ON) = 0.55 @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES TO-252(D-PAK) TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Tc =... See More ⇒

 0.2. Size:591K  maple semi
 sld740uz.pdf

LEAD FREE Pb RoHS SLD740UZ 400V N-Channel MOSFET General Description Features - 11A, 400V, RDS(on)typ. = 0.55 @VGS = 10 V - Low gate charge ( typical 23nC) This Power MOSFET is produced using Maple semi s - High ruggedness advanced trench MOSFET technology. - Fast switching This advanced technology has been especially tailored - 100% avalanche tested to minimize on-sta... See More ⇒

 0.3. Size:1077K  samwin
 swp740d swf740d swd740d.pdf

SW740D N-channel Enhanced mode TO-220/TO-220F/TO-252 MOSFET Features BVDSS 400V TO-220 TO-220F TO-252 ID 10A High ruggedness Low RDS(ON) (Typ 0.4 )@VGS=10V RDS(ON) 0.4 Low Gate Charge (Typ 35nC) 2 Improved dv/dt Capability 1 1 1 100% Avalanche Tested 2 1 2 2 3 Application LED, DC-DC 3 3 1. Gate 2. Drain 3. Source General Description 3 ... See More ⇒