740/F740/I740/E740/B740/D74010A 400V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhanced vdmosfets, is obtained by the2 DV = 400VDSSself-aligned planar technology which reduce the conductionloss, improve switching performance and enhance theR = 0.44DS(on)(TYP)Gavalanche energy. Which accords with the RoHS standard.1I = 10A3 S D2 Featu

CED740A/CEU740AN-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES400V, 9A, RDS(ON) = 0.55 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.DTO-251 & TO-252 package.DGGSCEU SERIESCED SERIESTO-252(D-PAK)TO-251(I-PAK)SABSOLUTE MAXIMUM RATINGS Tc =

LEAD FREEPbRoHS SLD740UZ400V N-Channel MOSFETGeneral Description Features - 11A, 400V, RDS(on)typ. = 0.55@VGS = 10 V - Low gate charge ( typical 23nC)This Power MOSFET is produced using Maple semis - High ruggednessadvanced trench MOSFET technology. - Fast switchingThis advanced technology has been especially tailored - 100% avalanche testedto minimize on-sta

SW740DN-channel Enhanced mode TO-220/TO-220F/TO-252 MOSFETFeaturesBVDSS : 400VTO-220TO-220F TO-252ID : 10A High ruggedness Low RDS(ON) (Typ 0.4)@VGS=10VRDS(ON) : 0.4 Low Gate Charge (Typ 35nC)2 Improved dv/dt Capability 11 1 100% Avalanche Tested212 23 Application: LED, DC-DC 3 31. Gate 2. Drain 3. SourceGeneral Description 3