D8N50 Datasheet and Replacement

D8N508A 500V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhanced vdmosfets, is obtained by the self-alignedVDSS = 500Vplanar technology which reduce the conduction loss, improve switchingI = 8.0ADperformance and enhance the avalanche energy. Which accords with theRoHS standard.RDS(on)TYP)=0.722 Features Fast switching ESD impro

August 2010UniFET-IITMFDD8N50NZN-Channel MOSFET 500V, 6.5A, 0.85Features Description RDS(on) = 0.77 ( Typ.) @ VGS = 10V, ID = 3.25A This N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS Low Gate Charge ( Typ. 14nC)technology. Low Crss ( Typ. 5pF)This advance technology has been especiall

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

SLD8N50UD500V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Msemiteks advanced 8A, 500V, RDS(on),typ =0.82planar stripe DMOS technology. This advanced technology Low gate charge (Qg,typ = 20nC)has been especially tailored to minimize conduction loss, pro- Fast switchingvide superior switching performance, and withstand high en-

TMD8N50Z(G)/TMU8N50Z(G) N-channel MOSFET Features Low gate charge BVDSS ID RDS(on) 100% avalanche tested 500V 8A

Isc N-Channel MOSFET Transistor FDD8N50NZFEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt