D9N65 Specs and Replacement

Type Designator: D9N65

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 97 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm

Package: TO252

D9N65 substitution

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D9N65 datasheet

 ..1. Size:1294K  cn wxdh
d9n65.pdf pdf_icon

D9N65

D9N65 9A 650V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the self-aligned V DSS = 650V planar technology which reduce the conduction loss, improve switching I = 9.0A D performance and enhance the avalanche energy. Which accords with the RoHS standard. TO-220F provides insulation voltage rated at 2000V R DS(on) TYP) =1.... See More ⇒

 0.1. Size:1352K  st
std9n65m2 stf9n65m2 stp9n65m2 stu9n65m2.pdf pdf_icon

D9N65

STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2 N-channel 650 V, 0.79 typ., 5 A MDmesh M2 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages Datasheet - production data Features TAB RDS(on) Order codes VDS max ID 3 1 DPAK STD9N65M2 3 2 1 STF9N65M2 650 V 0.9 5 A STP9N65M2 TO-220FP TAB STU9N65M2 TAB Extremely low gate charge 3 2 Excellent output capacit... See More ⇒

Detailed specifications: D5N65-XAD, D630, D640, D740, D7N60, D7N70, D80N06, D8N50, AON7408, 18P10, 18P10B, 18P10D, 18P10E, 18P10F, 18P10I, D10N70, D110N04

Keywords - D9N65 MOSFET specs

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