All MOSFET. D9N65 Datasheet

 

D9N65 Datasheet and Replacement


   Type Designator: D9N65
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 22.4 nC
   trⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 97 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
   Package: TO252
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D9N65 Datasheet (PDF)

 ..1. Size:1294K  cn wxdh
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D9N65

D9N659A 650V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhanced vdmosfets, is obtained by the self-alignedVDSS = 650Vplanar technology which reduce the conduction loss, improve switchingI = 9.0ADperformance and enhance the avalanche energy. Which accords with theRoHS standard. TO-220F provides insulation voltage rated at 2000VRDS(on)TYP)=1.

 0.1. Size:1352K  st
 std9n65m2 stf9n65m2 stp9n65m2 stu9n65m2.pdf pdf_icon

D9N65

STD9N65M2, STF9N65M2, STP9N65M2, STU9N65M2N-channel 650 V, 0.79 typ., 5 A MDmesh M2 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packagesDatasheet - production dataFeaturesTABRDS(on) Order codes VDS max ID31DPAK STD9N65M2321 STF9N65M2650 V 0.9 5 ASTP9N65M2TO-220FPTAB STU9N65M2TAB Extremely low gate charge32 Excellent output capacit

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: D12N06

Keywords - D9N65 MOSFET datasheet

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