D10N70 Datasheet and Replacement
Type Designator: D10N70
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 130 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 24.8 nS
Cossⓘ - Output Capacitance: 120 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
Package: TO252
D10N70 substitution
D10N70 Datasheet (PDF)
d10n70.pdf

D10N7010A 700V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhanced vdmosfets, is obtained by the self-alignedVDSS = 700Vplanar technology which reduce the conduction loss, improve switchingI = 10.0ADperformance and enhance the avalanche energy. Which accords with theRoHS standard.RDS(on)TYP)=0.962 Features Fast switching ESD im
swf10n70k swd10n70k.pdf

SW10N70K N-channel Enhanced mode TO-220F/TO-252 MOSFET Features TO-220F TO-252 BVDSS : 700V ID : 10A High ruggedness Low RDS(ON) (Typ 0.36)@VGS=10V RDS(ON) : 0.36 Low Gate Charge (Typ 29nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 1 2 2 3 3 Application:Charger,LED,TV-Power 1 1. Gate 2. Drain 3. Source General D
sw10n70k swf10n70k swd10n70k.pdf

SW10N70K N-channel Enhanced mode TO-220F/TO-252 MOSFET Features TO-220F TO-252 BVDSS : 700V ID : 10A High ruggedness Low RDS(ON) (Typ 0.36)@VGS=10V RDS(ON) : 0.36 Low Gate Charge (Typ 29nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 1 2 2 3 3 Application:Charge,LED,TV-Power 1 1. Gate 2. Drain 3. Source General De
Datasheet: D8N50 , D9N65 , 18P10 , 18P10B , 18P10D , 18P10E , 18P10F , 18P10I , AO3400 , D110N04 , D120N10ZR , CMP3006-VB , 2N3368 , 2N3369 , 2N3370 , DH020N03F , DH020N03I .
History: PMZB200UNE
Keywords - D10N70 MOSFET datasheet
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D10N70 substitution
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History: PMZB200UNE



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