All MOSFET. D10N70 Datasheet

 

D10N70 Datasheet and Replacement


   Type Designator: D10N70
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 24.8 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
   Package: TO252
 

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D10N70 Datasheet (PDF)

 ..1. Size:1248K  cn wxdh
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D10N70

D10N7010A 700V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhanced vdmosfets, is obtained by the self-alignedVDSS = 700Vplanar technology which reduce the conduction loss, improve switchingI = 10.0ADperformance and enhance the avalanche energy. Which accords with theRoHS standard.RDS(on)TYP)=0.962 Features Fast switching ESD im

 0.1. Size:905K  samwin
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D10N70

SW10N70K N-channel Enhanced mode TO-220F/TO-252 MOSFET Features TO-220F TO-252 BVDSS : 700V ID : 10A High ruggedness Low RDS(ON) (Typ 0.36)@VGS=10V RDS(ON) : 0.36 Low Gate Charge (Typ 29nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 1 2 2 3 3 Application:Charger,LED,TV-Power 1 1. Gate 2. Drain 3. Source General D

 0.2. Size:946K  samwin
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D10N70

SW10N70K N-channel Enhanced mode TO-220F/TO-252 MOSFET Features TO-220F TO-252 BVDSS : 700V ID : 10A High ruggedness Low RDS(ON) (Typ 0.36)@VGS=10V RDS(ON) : 0.36 Low Gate Charge (Typ 29nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 1 2 2 3 3 Application:Charge,LED,TV-Power 1 1. Gate 2. Drain 3. Source General De

Datasheet: D8N50 , D9N65 , 18P10 , 18P10B , 18P10D , 18P10E , 18P10F , 18P10I , AO3400 , D110N04 , D120N10ZR , CMP3006-VB , 2N3368 , 2N3369 , 2N3370 , DH020N03F , DH020N03I .

History: SWP540 | DCC080M120A | APT34M60B | YJG90G10A | CS6N70F | BUK9K18-40E | STN3414

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