D10N70 Specs and Replacement

Type Designator: D10N70

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 130 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24.8 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm

Package: TO252

D10N70 substitution

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D10N70 datasheet

 ..1. Size:1248K  cn wxdh
 d10n70.pdf pdf_icon

D10N70

D10N70 10A 700V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhanced vdmosfets, is obtained by the self-aligned V DSS = 700V planar technology which reduce the conduction loss, improve switching I = 10.0A D performance and enhance the avalanche energy. Which accords with the RoHS standard. R DS(on) TYP) =0.96 2 Features Fast switching ESD im... See More ⇒

 0.1. Size:905K  samwin
 swf10n70k swd10n70k.pdf pdf_icon

D10N70

SW10N70K N-channel Enhanced mode TO-220F/TO-252 MOSFET Features TO-220F TO-252 BVDSS 700V ID 10A High ruggedness Low RDS(ON) (Typ 0.36 )@VGS=10V RDS(ON) 0.36 Low Gate Charge (Typ 29nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 1 2 2 3 3 Application Charger,LED,TV-Power 1 1. Gate 2. Drain 3. Source General D... See More ⇒

 0.2. Size:946K  samwin
 sw10n70k swf10n70k swd10n70k.pdf pdf_icon

D10N70

SW10N70K N-channel Enhanced mode TO-220F/TO-252 MOSFET Features TO-220F TO-252 BVDSS 700V ID 10A High ruggedness Low RDS(ON) (Typ 0.36 )@VGS=10V RDS(ON) 0.36 Low Gate Charge (Typ 29nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 1 2 2 3 3 Application Charge,LED,TV-Power 1 1. Gate 2. Drain 3. Source General De... See More ⇒

Detailed specifications: D8N50, D9N65, 18P10, 18P10B, 18P10D, 18P10E, 18P10F, 18P10I, AO3401, D110N04, D120N10ZR, CMP3006-VB, 2N3368, 2N3369, 2N3370, DH020N03F, DH020N03I

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