All MOSFET. DH020N03F Datasheet

 

DH020N03F Datasheet and Replacement


   Type Designator: DH020N03F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 200 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 120 nS
   Cossⓘ - Output Capacitance: 787 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm
   Package: TO220F
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DH020N03F Datasheet (PDF)

 ..1. Size:1166K  cn wxdh
 dh020n03 dh020n03f dh020n03i dh020n03e dh020n03b dh020n03d.pdf pdf_icon

DH020N03F

DH020N03/DH020N03F/DH020N03I/DH020N03E/DH020N03B/DH020N03D200A 30V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 30VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 2.0mDS(on) (TYP)standard.13 SI = 200AD2 Features Low on res

 6.1. Size:704K  cn wxdh
 dh020n03p.pdf pdf_icon

DH020N03F

DH020N03P160A 30V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 30VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 1.5mDS(on) (TYP)standard.13 SI = 160AD2 Features Low on resistance Low gate charge Fast switching

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History: LSF65R570GT | CSD16342Q5A

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