DH020N03F Datasheet and Replacement
Type Designator: DH020N03F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 56 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 200 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 120 nS
Cossⓘ - Output Capacitance: 787 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm
Package: TO220F
DH020N03F substitution
DH020N03F Datasheet (PDF)
dh020n03 dh020n03f dh020n03i dh020n03e dh020n03b dh020n03d.pdf

DH020N03/DH020N03F/DH020N03I/DH020N03E/DH020N03B/DH020N03D200A 30V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 30VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 2.0mDS(on) (TYP)standard.13 SI = 200AD2 Features Low on res
dh020n03p.pdf

DH020N03P160A 30V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 30VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 1.5mDS(on) (TYP)standard.13 SI = 160AD2 Features Low on resistance Low gate charge Fast switching
Datasheet: 18P10I , D10N70 , D110N04 , D120N10ZR , CMP3006-VB , 2N3368 , 2N3369 , 2N3370 , TK10A60D , DH020N03I , DH020N03P , DCC016M120G2 , DCC016M120G3 , DCC020M65G2 , DCC030M120G2 , DCC040M65G2 , DCC060M65G2 .
History: 11N90 | AO3453 | BSC200P03LSG | AP2304GN | AP15P10GI | FDMS3668S | AOD468
Keywords - DH020N03F MOSFET datasheet
DH020N03F cross reference
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History: 11N90 | AO3453 | BSC200P03LSG | AP2304GN | AP15P10GI | FDMS3668S | AOD468



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