DH020N03P Specs and Replacement

Type Designator: DH020N03P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 220 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 160 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 120 nS

Cossⓘ - Output Capacitance: 787 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0018 Ohm

Package: DFN5X6-8L

DH020N03P substitution

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DH020N03P datasheet

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DH020N03P

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DH020N03P

DH020N03/DH020N03F/DH020N03I/ DH020N03E/DH020N03B/DH020N03D 200A 30V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 30V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 2.0m DS(on) (TYP) standard. 1 3 S I = 200A D 2 Features Low on res... See More ⇒

Detailed specifications: D110N04, D120N10ZR, CMP3006-VB, 2N3368, 2N3369, 2N3370, DH020N03F, DH020N03I, 12N60, DCC016M120G2, DCC016M120G3, DCC020M65G2, DCC030M120G2, DCC040M65G2, DCC060M65G2, DCC075M120G2C, DCC080M120A

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