DH020N03P Datasheet and Replacement
Type Designator: DH020N03P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 220 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 160 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 120 nS
Cossⓘ - Output Capacitance: 787 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0018 Ohm
Package: DFN5X6-8L
DH020N03P substitution
DH020N03P Datasheet (PDF)
dh020n03p.pdf

DH020N03P160A 30V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 30VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 1.5mDS(on) (TYP)standard.13 SI = 160AD2 Features Low on resistance Low gate charge Fast switching
dh020n03 dh020n03f dh020n03i dh020n03e dh020n03b dh020n03d.pdf

DH020N03/DH020N03F/DH020N03I/DH020N03E/DH020N03B/DH020N03D200A 30V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 30VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 2.0mDS(on) (TYP)standard.13 SI = 200AD2 Features Low on res
Datasheet: D110N04 , D120N10ZR , CMP3006-VB , 2N3368 , 2N3369 , 2N3370 , DH020N03F , DH020N03I , 4N60 , DCC016M120G2 , DCC016M120G3 , DCC020M65G2 , DCC030M120G2 , DCC040M65G2 , DCC060M65G2 , DCC075M120G2C , DCC080M120A .
History: NTMFS024N06C | DHB16N06 | AP60SL650AFI | BLP04N10-P | AUIRFIZ44N | SE2N7002 | SM140R50CT1TL
Keywords - DH020N03P MOSFET datasheet
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History: NTMFS024N06C | DHB16N06 | AP60SL650AFI | BLP04N10-P | AUIRFIZ44N | SE2N7002 | SM140R50CT1TL



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