DCC040M65G2 Specs and Replacement
Type Designator: DCC040M65G2
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 176 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 22 V
|Id| ⓘ - Maximum Drain Current: 52 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 135 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm
Package: TO247
DCC040M65G2 substitution
- MOSFET ⓘ Cross-Reference Search
DCC040M65G2 datasheet
dcc040m65g2 dccf040m65g2.pdf
DCC040M65G2/DCCF040M65G2 52A 650V N-channel SiC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. 2 Features Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequency... See More ⇒
Detailed specifications: 2N3370, DH020N03F, DH020N03I, DH020N03P, DCC016M120G2, DCC016M120G3, DCC020M65G2, DCC030M120G2, IRF530, DCC060M65G2, DCC075M120G2C, DCC080M120A, DCC160M120G1, DCCF016M120G2, DCCF016M120G3, DCCF020M65G2, DH100P40D
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