All MOSFET. DCC040M65G2 Datasheet

 

DCC040M65G2 Datasheet and Replacement


   Type Designator: DCC040M65G2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 176 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 22 V
   |Id| ⓘ - Maximum Drain Current: 52 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 135 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm
   Package: TO247
 

 DCC040M65G2 substitution

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DCC040M65G2 Datasheet (PDF)

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DCC040M65G2

DCC040M65G2/DCCF040M65G2 52A 650V N-channel SiC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. 2 Features Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequency

Datasheet: 2N3370 , DH020N03F , DH020N03I , DH020N03P , DCC016M120G2 , DCC016M120G3 , DCC020M65G2 , DCC030M120G2 , IRF530 , DCC060M65G2 , DCC075M120G2C , DCC080M120A , DCC160M120G1 , DCCF016M120G2 , DCCF016M120G3 , DCCF020M65G2 , DH100P40D .

History: IXTH10N60A

Keywords - DCC040M65G2 MOSFET datasheet

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