DCC060M65G2 Specs and Replacement

Type Designator: DCC060M65G2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 166 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 22 V

|Id| ⓘ - Maximum Drain Current: 41 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 82 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.079 Ohm

Package: TO247

DCC060M65G2 substitution

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DCC060M65G2 datasheet

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 dcc060m65g2 dccf060m65g2.pdf pdf_icon

DCC060M65G2

DCC060M65G2/DCCF060M65G2 41A 650V N-channel SiC Power MOSFET 1 Description This product family offers state of the art performance. It is designed for high frequency applications where high efficiency and high reliability are required. 2 Features Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequency... See More ⇒

Detailed specifications: DH020N03F, DH020N03I, DH020N03P, DCC016M120G2, DCC016M120G3, DCC020M65G2, DCC030M120G2, DCC040M65G2, CS150N03A8, DCC075M120G2C, DCC080M120A, DCC160M120G1, DCCF016M120G2, DCCF016M120G3, DCCF020M65G2, DH100P40D, DH100P40E

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.