DH105N07F Datasheet and Replacement
Type Designator: DH105N07F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 68 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 60 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 174 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: TO220F
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DH105N07F Datasheet (PDF)
dh105n07 dh105n07f dh105n07i dh105n07e dh105n07b dh105n07d.pdf

DH105N07/DH105N07F/DH105N07I/DH105N07E/DH105N07B/DH105N07D60A 68V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 68VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 10.5mDS(on) (TYP)standard.13 SI = 60AD2 Features Low on resi
dh105n07p.pdf

DH105N07P56A 70V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 70VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 10mDS(on) (TYP)standard.13 SI = 56AD2 Features Low on resistance Low gate charge Fast switching
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Keywords - DH105N07F MOSFET datasheet
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History: GSM3030 | IRF6612



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