All MOSFET. DH4N150F Datasheet

 

DH4N150F Datasheet and Replacement


   Type Designator: DH4N150F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 98 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 6.5 Ohm
   Package: TO3PF
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DH4N150F Datasheet (PDF)

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DH4N150F

DH4N150F4A 1500V N-channel Enhancement Mode Power MOSFET1 DescriptionDH4N150 , the silicon N-channel Enhanced VDMOSFETs, is obtained byVDSS = 1500Vthe self-aligned planar Technology which reduce the conduction loss,I = 4.0ADimprove switching performance and enhance the avalanche energy. Thetransistor can be used in various power switching circuit for systemRDS(on)TYP)

 7.1. Size:782K  cn wxdh
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DH4N150F

DH4N150B4A 1500V N-channel Enhancement Mode Power MOSFET1 DescriptionDH4N150 , the silicon N-channel Enhanced VDMOSFETs, is obtained byVDSS = 1500Vthe self-aligned planar Technology which reduce the conduction loss,I = 4.0ADimprove switching performance and enhance the avalanche energy. Thetransistor can be used in various power switching circuit for systemRDS(on)TYP)

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: WMK25N80M3 | MTC2804Q8

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