All MOSFET. DH4N150F Datasheet

 

DH4N150F Datasheet and Replacement


   Type Designator: DH4N150F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 98 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 6.5 Ohm
   Package: TO3PF
 

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DH4N150F Datasheet (PDF)

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DH4N150F

DH4N150F4A 1500V N-channel Enhancement Mode Power MOSFET1 DescriptionDH4N150 , the silicon N-channel Enhanced VDMOSFETs, is obtained byVDSS = 1500Vthe self-aligned planar Technology which reduce the conduction loss,I = 4.0ADimprove switching performance and enhance the avalanche energy. Thetransistor can be used in various power switching circuit for systemRDS(on)TYP)

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DH4N150F

DH4N150B4A 1500V N-channel Enhancement Mode Power MOSFET1 DescriptionDH4N150 , the silicon N-channel Enhanced VDMOSFETs, is obtained byVDSS = 1500Vthe self-aligned planar Technology which reduce the conduction loss,I = 4.0ADimprove switching performance and enhance the avalanche energy. Thetransistor can be used in various power switching circuit for systemRDS(on)TYP)

Datasheet: DH105N07 , DH105N07B , DH105N07D , DH105N07E , DH105N07F , DH105N07I , DH105N07P , DH4N150B , IRF830 , DH500P06R , DH50N06FZC , DH50N15 , DH60N06 , DH8004 , DH8004B , DH8004D , DH80N08B22 .

History: TPP70R360M | 2SK2146 | 19N10G-TMS4-T | MTP4411M3 | 2SK410 | RQ3G100GN | BSB028N06NN3G

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