DH4N150F Specs and Replacement

Type Designator: DH4N150F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 98 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 6.5 Ohm

Package: TO3PF

DH4N150F substitution

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DH4N150F datasheet

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DH4N150F

DH4N150F 4A 1500V N-channel Enhancement Mode Power MOSFET 1 Description DH4N150 , the silicon N-channel Enhanced VDMOSFETs, is obtained by V DSS = 1500V the self-aligned planar Technology which reduce the conduction loss, I = 4.0A D improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system R DS(on) TYP)... See More ⇒

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DH4N150F

DH4N150B 4A 1500V N-channel Enhancement Mode Power MOSFET 1 Description DH4N150 , the silicon N-channel Enhanced VDMOSFETs, is obtained by V DSS = 1500V the self-aligned planar Technology which reduce the conduction loss, I = 4.0A D improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system R DS(on) TYP)... See More ⇒

Detailed specifications: DH105N07, DH105N07B, DH105N07D, DH105N07E, DH105N07F, DH105N07I, DH105N07P, DH4N150B, 2N60, DH500P06R, DH50N06FZC, DH50N15, DH60N06, DH8004, DH8004B, DH8004D, DH80N08B22

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