DH8004D Specs and Replacement

Type Designator: DH8004D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 245 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 180 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 1030 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm

Package: TO3P

DH8004D substitution

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DH8004D datasheet

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 dh8004 dhi8004 dhe8004 dh8004d dh8004b.pdf pdf_icon

DH8004D

DH8004/DHI8004/DHE8004/ DH8004D/DH8004B 180A 80V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used advanced trench technology design, provided excellent 2 D Rdson and low gate charge. Which accords with the RoHS V = 80V DSS standard. G R = 2.8m DS(on) (Type) 1 2 Features 3 S I = 180A D Fast switching Low on resi... See More ⇒

Detailed specifications: DH4N150B, DH4N150F, DH500P06R, DH50N06FZC, DH50N15, DH60N06, DH8004, DH8004B, IRF1405, DH80N08B22, DH8290, DH850N10, DH850N10B, DH850N10D, DH850N10E, DH850N10F, DH150N12

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs