All MOSFET. DH8004D Datasheet

 

DH8004D Datasheet and Replacement


   Type Designator: DH8004D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 245 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 180 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 1030 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TO3P
 

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DH8004D Datasheet (PDF)

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DH8004D

DH8004/DHI8004/DHE8004/DH8004D/DH8004B180A 80V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets usedadvanced trench technology design, provided excellent2 DRdson and low gate charge. Which accords with the RoHSV = 80VDSSstandard.G R = 2.8mDS(on) (Type)12 Features3 S I = 180AD Fast switching Low on resi

Datasheet: DH4N150B , DH4N150F , DH500P06R , DH50N06FZC , DH50N15 , DH60N06 , DH8004 , DH8004B , IRF1405 , DH80N08B22 , DH8290 , DH850N10 , DH850N10B , DH850N10D , DH850N10E , DH850N10F , DH150N12 .

History: IPB065N10N3G | AONS36333

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