All MOSFET. DH80N08B22 Datasheet

 

DH80N08B22 Datasheet and Replacement


   Type Designator: DH80N08B22
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 145 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 115 nS
   Cossⓘ - Output Capacitance: 292 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO220
 

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DH80N08B22 Datasheet (PDF)

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DH80N08B22

DH80N08B22/DHF80N08B22/DHI80N08B22/DHE80N08B22/DHB80N08B22/DHD80N08B2280A 80V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 80VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSR = 6.5mDS(on) (Type)Gstandard.1I = 80A3 S D2 Features

Datasheet: DH4N150F , DH500P06R , DH50N06FZC , DH50N15 , DH60N06 , DH8004 , DH8004B , DH8004D , MMIS60R580P , DH8290 , DH850N10 , DH850N10B , DH850N10D , DH850N10E , DH850N10F , DH150N12 , DH150N12B .

History: OSG70R1K4FF | SLD60R380S2 | IXTA4N150HV

Keywords - DH80N08B22 MOSFET datasheet

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