All MOSFET. DH850N10 Datasheet

 

DH850N10 Datasheet and Replacement


   Type Designator: DH850N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 19.2 nS
   Cossⓘ - Output Capacitance: 33 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: TO220
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DH850N10 Datasheet (PDF)

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DH850N10

DH850N10/DH850N10F/DH850N10IDH850N10E/DH850N10B/DH850N10D15A 100V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 100VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 86mDS(on) (TYP)standard.13 SID =15A2 Features Low on resistan

 0.1. Size:791K  cn wxdh
 dh850n10b dh850n10d.pdf pdf_icon

DH850N10

DH850N10B/DH850N10D12A 100V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 100VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 86mDS(on) (TYP)standard.13 SID =12A2 Features Low on resistance Low gate charge Fast switch

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: UPA2756GR | IRFP21N60L | AP2318GEN-HF | STT3P2UH7 | IXTA08N120P | STD6N60M2

Keywords - DH850N10 MOSFET datasheet

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