DH850N10B Specs and Replacement

Type Designator: DH850N10B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 28 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19.2 nS

Cossⓘ - Output Capacitance: 33 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm

Package: TO251

DH850N10B substitution

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DH850N10B datasheet

 ..1. Size:1158K  cn wxdh
 dh850n10 dh850n10f dh850n10i dh850n10e dh850n10b dh850n10d.pdf pdf_icon

DH850N10B

DH850N10/DH850N10F/DH850N10I DH850N10E/DH850N10B/DH850N10D 15A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 100V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 86m DS(on) (TYP) standard. 1 3 S ID =15A 2 Features Low on resistan... See More ⇒

 ..2. Size:791K  cn wxdh
 dh850n10b dh850n10d.pdf pdf_icon

DH850N10B

DH850N10B/DH850N10D 12A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 100V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 86m DS(on) (TYP) standard. 1 3 S ID =12A 2 Features Low on resistance Low gate charge Fast switch... See More ⇒

Detailed specifications: DH50N15, DH60N06, DH8004, DH8004B, DH8004D, DH80N08B22, DH8290, DH850N10, IRF830, DH850N10D, DH850N10E, DH850N10F, DH150N12, DH150N12B, DH150N12D, DH150N12E, DH150N12F

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