DH150N12B Specs and Replacement

Type Designator: DH150N12B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 230 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 105 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: TO251

DH150N12B substitution

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DH150N12B datasheet

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DH150N12B

DH150N12/DH150N12F/DH150N12I DH150N12E/DH150N12B/DH150N12D 50A 120V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 120V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 15.0m DS(on) (TYP) standard. 1 3 S I = 50A D 2 Features Low on res... See More ⇒

Detailed specifications: DH80N08B22, DH8290, DH850N10, DH850N10B, DH850N10D, DH850N10E, DH850N10F, DH150N12, K2611, DH150N12D, DH150N12E, DH150N12F, DH150N12I, DH160P03V, DH160P04D, DH16N06, DH170P04V

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