DH150N12I Specs and Replacement
Type Designator: DH150N12I
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 230 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 105 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: TO262
DH150N12I substitution
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DH150N12I datasheet
dh150n12 dh150n12f dh150n12i dh150n12e dh150n12b dh150n12d.pdf
DH150N12/DH150N12F/DH150N12I DH150N12E/DH150N12B/DH150N12D 50A 120V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 120V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 15.0m DS(on) (TYP) standard. 1 3 S I = 50A D 2 Features Low on res... See More ⇒
Detailed specifications: DH850N10D, DH850N10E, DH850N10F, DH150N12, DH150N12B, DH150N12D, DH150N12E, DH150N12F, AOD4184A, DH160P03V, DH160P04D, DH16N06, DH170P04V, DH1K1N10, DH1K1N10B, DH1K1N10D, DH1K1N10E
Keywords - DH150N12I MOSFET specs
DH150N12I cross reference
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History: DH150N12D
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