All MOSFET. DH16N06 Datasheet

 

DH16N06 Datasheet and Replacement


   Type Designator: DH16N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 61 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 123 nS
   Cossⓘ - Output Capacitance: 607 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm
   Package: TO220
 

 DH16N06 substitution

   - MOSFET ⓘ Cross-Reference Search

 

DH16N06 Datasheet (PDF)

 ..1. Size:1349K  cn wxdh
 dh16n06 dhf16n06 dhi16n06 dhe16n06 dhb16n06 dhd16n06.pdf pdf_icon

DH16N06

DH16N06/DHF16N06/DHI16N06/DHE16N06/DHB16N06/DHD16N0661A 60V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel Enhanced VDMOSFETs Used by the2 DVDSS = 60Vself-aligned planar technology which reduce theconduction loss, improve switching performance andRDS = 16m(on) (TYP)Genhance the avalanche energy. Which accords with the1RoHS standard. ID = 61A3

Datasheet: DH150N12 , DH150N12B , DH150N12D , DH150N12E , DH150N12F , DH150N12I , DH160P03V , DH160P04D , 5N50 , DH170P04V , DH1K1N10 , DH1K1N10B , DH1K1N10D , DH1K1N10E , DH1K1N10F , DH1K1N10I , DH300N08 .

History: SI4622DY | VBZL80N03

Keywords - DH16N06 MOSFET datasheet

 DH16N06 cross reference
 DH16N06 equivalent finder
 DH16N06 lookup
 DH16N06 substitution
 DH16N06 replacement

 

 
Back to Top

 


 
.