DH16N06 Specs and Replacement

Type Designator: DH16N06

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 61 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 123 nS

Cossⓘ - Output Capacitance: 607 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm

Package: TO220

DH16N06 substitution

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DH16N06 datasheet

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 dh16n06 dhf16n06 dhi16n06 dhe16n06 dhb16n06 dhd16n06.pdf pdf_icon

DH16N06

DH16N06/DHF16N06/DHI16N06/ DHE16N06/DHB16N06/DHD16N06 61A 60V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel Enhanced VDMOSFETs Used by the 2 D VDSS = 60V self-aligned planar technology which reduce the conduction loss, improve switching performance and RDS = 16m (on) (TYP) G enhance the avalanche energy. Which accords with the 1 RoHS standard. ID = 61A 3... See More ⇒

Detailed specifications: DH150N12, DH150N12B, DH150N12D, DH150N12E, DH150N12F, DH150N12I, DH160P03V, DH160P04D, IRFP064N, DH170P04V, DH1K1N10, DH1K1N10B, DH1K1N10D, DH1K1N10E, DH1K1N10F, DH1K1N10I, DH300N08

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