All MOSFET. DH1K1N10E Datasheet

 

DH1K1N10E Datasheet and Replacement


   Type Designator: DH1K1N10E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 19.7 nS
   Cossⓘ - Output Capacitance: 27 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
   Package: TO263
      - MOSFET Cross-Reference Search

 

DH1K1N10E Datasheet (PDF)

 ..1. Size:1154K  cn wxdh
 dh1k1n10 dh1k1n10f dh1k1n10i dh1k1n10e dh1k1n10b dh1k1n10d.pdf pdf_icon

DH1K1N10E

DH1K1N10/DH1K1N10F/DH1K1N10IDH1K1N10E/DH1K1N10B/DH1K1N10D12A 100V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 100VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 112mDS(on) (TYP)standard.13 SID =12A2 Features Low on resista

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IRC350 | IXFA3N80 | NP84N055MHE | AFN2312 | IRH7250 | IXFH15N100P | SVF840D

Keywords - DH1K1N10E MOSFET datasheet

 DH1K1N10E cross reference
 DH1K1N10E equivalent finder
 DH1K1N10E lookup
 DH1K1N10E substitution
 DH1K1N10E replacement

 

 
Back to Top

 


 
.