DH1K1N10I Specs and Replacement

Type Designator: DH1K1N10I

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19.7 nS

Cossⓘ - Output Capacitance: 27 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm

Package: TO262

DH1K1N10I substitution

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DH1K1N10I datasheet

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DH1K1N10I

DH1K1N10/DH1K1N10F/DH1K1N10I DH1K1N10E/DH1K1N10B/DH1K1N10D 12A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 100V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 112m DS(on) (TYP) standard. 1 3 S ID =12A 2 Features Low on resista... See More ⇒

Detailed specifications: DH160P04D, DH16N06, DH170P04V, DH1K1N10, DH1K1N10B, DH1K1N10D, DH1K1N10E, DH1K1N10F, 20N60, DH300N08, DH300N08B, DH300N08D, DH300N08E, DH300N08F, DH300N08I, DH300P06, DH300P06B

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.