DH025N04 Datasheet and Replacement
Type Designator: DH025N04
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 190 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 130 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 124 nS
Cossⓘ - Output Capacitance: 501 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0037 Ohm
Package: TO220
DH025N04 substitution
DH025N04 Datasheet (PDF)
dh025n04 dh025n04f dh025n04i dh025n04e dh025n04b dh025n04d.pdf

DH025N04/DH025N04F/DH025N04IDH025N04E/DH025N04B/DH025N04D130A 40V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 40VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 2.8mDS(on) (TYP)standard.13 SI = 130AD2 Features Low on resi
dh025n03 dh025n03f dh025n03e dh025n03i dh025n03b dh025n03d.pdf

DH025N03/DH025N03F/DH025N03EDH025N03I/DH025N03B/DH025N03D150A 30V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 30VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 2.5mDS(on) (TYP)standard.13 SI = 150AD2 Features Low on resi
dh025n08.pdf

DH025N0885V/2.9m/215A N-MOSFETFeatures Key Parameters Fast switching VDS 85V Low on resistance RDS(on)typ. 2.9m Low gate charge ID 215A High avalanche current Vth 2.9V Low reverse transfer capacitances Ciss@10V 17292pF 100% single pulse avalanche energy test Qgd 94nC 100% VDS testApplications Motor Control and Drive Charge/Discharge for B
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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