HY1708MF-VB Specs and Replacement
Type Designator: HY1708MF-VB
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 75 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 950 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0064 Ohm
Package: TO220F
HY1708MF-VB substitution
- MOSFET ⓘ Cross-Reference Search
HY1708MF-VB datasheet
hy1708mf-vb.pdf
HY1708MF-VB www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any er... See More ⇒
hy1707.pdf
HY1707P/M/B/I/MF/PS/PM N-Channel Enhancement Mode MOSFET Pin Description Features 70V/80A, RDS(ON)= 6m (typ.) @ VGS=10V S Avalanche Rated D S D G G S Reliable and Rugged S D D G G TO-263-2L TO-262-3L Lead Free and Green Devices Available TO-220FB-3L TO-220FB-3S (RoHS Compliant) S D G S D S D G G Applications TO-3PS-3L TO-3PS-3M TO-220MF-3L D Power Man... See More ⇒
Detailed specifications: DH025N03F , DH025N03I , DH025N04 , DH025N04B , DH025N04D , DH025N04E , DH025N04F , DH025N04I , CS150N03A8 , PK6H6BA , QN3103M6N , DH135N10P , DH140N10B , DH140N10D , DH240N06L , DH240N06LB , DH240N06LD .
Keywords - HY1708MF-VB MOSFET specs
HY1708MF-VB cross reference
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HY1708MF-VB replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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