All MOSFET. DH135N10P Datasheet

 

DH135N10P Datasheet and Replacement


   Type Designator: DH135N10P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 147 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 47 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 120 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0156 Ohm
   Package: DFN5X6-8L
 

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DH135N10P Datasheet (PDF)

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DH135N10P

DH135N10P47A 100V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 100VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 13.0mDS(on) (TYP)standard.13 SI = 47AD2 Features Low on resistance Low gate charge Fast switching

Datasheet: DH025N04B , DH025N04D , DH025N04E , DH025N04F , DH025N04I , HY1708MF-VB , PK6H6BA , QN3103M6N , 18N50 , DH140N10B , DH140N10D , DH240N06L , DH240N06LB , DH240N06LD , DH240N06LE , DH240N06LF , DH240N06LI .

History: PSMN030-60YS | PSMN030-150B | AP65WN1K0I | SL3401 | CEB6060L | KNB3308B | PSMN7R0-100PS

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