All MOSFET. DH135N10P Datasheet

 

DH135N10P Datasheet and Replacement


   Type Designator: DH135N10P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 147 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 47 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 120 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0156 Ohm
   Package: DFN5X6-8L
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DH135N10P Datasheet (PDF)

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DH135N10P

DH135N10P47A 100V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 100VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 13.0mDS(on) (TYP)standard.13 SI = 47AD2 Features Low on resistance Low gate charge Fast switching

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: P0903BDB | IRF9395M | FQD17N08L | IRLI540A | IXFH110N10P | RSE002P03TL | SUM90P10-19L

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