DH135N10P Specs and Replacement

Type Designator: DH135N10P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 147 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 47 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 120 nS

Cossⓘ - Output Capacitance: 200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0156 Ohm

Package: DFN5X6-8L

DH135N10P substitution

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DH135N10P datasheet

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DH135N10P

DH135N10P 47A 100V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 100V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS G R = 13.0m DS(on) (TYP) standard. 1 3 S I = 47A D 2 Features Low on resistance Low gate charge Fast switching ... See More ⇒

Detailed specifications: DH025N04B, DH025N04D, DH025N04E, DH025N04F, DH025N04I, HY1708MF-VB, PK6H6BA, QN3103M6N, STP80NF70, DH140N10B, DH140N10D, DH240N06L, DH240N06LB, DH240N06LD, DH240N06LE, DH240N06LF, DH240N06LI

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