All MOSFET. DH140N10B Datasheet

 

DH140N10B Datasheet and Replacement


   Type Designator: DH140N10B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 220 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 68 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 110 nC
   trⓘ - Rise Time: 126 nS
   Cossⓘ - Output Capacitance: 220 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: TO251
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DH140N10B Datasheet (PDF)

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DH140N10B

DH140N10B&DH140N10D68A 100V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 100VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 11.0mDS(on) (TYP)standard.13 SI = 68AD2 Features Low on resistance Low gate charge Fast s

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