All MOSFET. DH140N10B Datasheet

 

DH140N10B Datasheet and Replacement


   Type Designator: DH140N10B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 220 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 68 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 126 nS
   Cossⓘ - Output Capacitance: 220 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: TO251
 

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DH140N10B Datasheet (PDF)

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DH140N10B

DH140N10B&DH140N10D68A 100V N-channel Enhancement Mode Power MOSFET1 DescriptionThese N-channel enhancement mode power mosfets used2 DV = 100VDSSadvanced trench technology design, provided excellentRdson and low gate charge. Which accords with the RoHSGR = 11.0mDS(on) (TYP)standard.13 SI = 68AD2 Features Low on resistance Low gate charge Fast s

Datasheet: DH025N04D , DH025N04E , DH025N04F , DH025N04I , HY1708MF-VB , PK6H6BA , QN3103M6N , DH135N10P , IRF1407 , DH140N10D , DH240N06L , DH240N06LB , DH240N06LD , DH240N06LE , DH240N06LF , DH240N06LI , DH400P06 .

History: IRF7904PBF-1 | IXFH88N30P | S-L2N7002DW1T1G | AUIRF1405ZSTRL | PSMN1R2-25YLC | DMN3024LK3 | CEP6036

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