DH026N06B Specs and Replacement

Type Designator: DH026N06B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 312 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 238 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 255 nS

Cossⓘ - Output Capacitance: 685 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0034 Ohm

Package: TO247

DH026N06B substitution

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DH026N06B datasheet

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DH026N06B

DH026N06/DH026N06F/DH026N06I/ DH026N06E/DH026N06D/DH026N06B 238A 60V N-channel Enhancement Mode Power MOSFET 1 Description These N-channel enhancement mode power mosfets used 2 D V = 60V DSS advanced trench technology design, provided excellent Rdson and low gate charge. Which accords with the RoHS R = 2.6m DS(on) (Type) G standard. 1 I = 238A 3 S D 2 Features Low on res... See More ⇒

Detailed specifications: DH400P06D, DH400P06E, DH400P06F, DH400P06I, DH400P06LB, DH400P06LD, DH025N08, DH026N06, IRFZ24N, DH026N06D, DH026N06E, DH026N06F, DH026N06I, DH028N03, DH028N03B, DH028N03D, DH028N03E

Keywords - DH026N06B MOSFET specs

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